Thin Film Module Dotted Interconnects via Laser Scribing
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Solution Overview
Problem
The challenge in monolithic photovoltaic module production is to minimize the expense of light-exposed area while maximizing current throughput and production yield, as existing methods require additional costly steps like drilling and metallizing, which decrease yield and increase costs.
Innovation Solution
A method involving laser scribing to create permanent metallization in semiconductive layers, allowing for series-interconnected optoelectronic components and busbars without the need for drilling and metallizing, thereby reducing production complexity and costs, and enabling roll-to-roll production of monolithic photovoltaic modules with reduced shadowing losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If drilling and metallizing steps are used to create vias for interconnecting optoelectronic components, then electrical connection between front and back contacts is achieved, but production costs increase and production yield decreases
Solution Approach 1:
The invention extracts and eliminates the separate drilling and metallizing steps from the production process. Instead of creating vias through mechanical drilling followed by metal deposition, the method uses laser scribing to directly create conductive pathways through the semiconductive layer, integrating the via formation and metallization into a single step, thereby removing unnecessary production steps that reduce yield and increase costs
Solution Approach 2:
The invention replaces the mechanical drilling process with a laser-based scribing process. The laser scribing method uses optical energy to ablate and metallize the semiconductive layer simultaneously, substituting mechanical removal with a thermal/optical process that directly creates conductive pathways without requiring subsequent metallization steps
2Reliability
If drilling and metallizing steps are used to create vias, then electrical interconnection is achieved, but production costs increase
Solution Approach 1:
The invention merges the via formation and metallization processes into a single laser scribing operation. The laser scribing process simultaneously creates the conductive pathway through ablation and deposits conductive material, combining multiple manufacturing steps into one, which reduces equipment requirements, simplifies the production line, and lowers overall manufacturing costs while maintaining reliable electrical interconnection
Solution Approach 2:
The invention replaces the mechanical drilling system with a laser-based system that performs both ablation and metallization. This substitution eliminates the need for separate metallization equipment and processes, reducing capital equipment costs, operational costs, and complexity while achieving the same electrical interconnection function
3Power
If front-contact grids are used to collect current, then current collection efficiency is improved, but the area occupied by grids increases, reducing light exposure area
Solution Approach 1:
The invention transitions the current collection approach from a two-dimensional grid pattern on the front surface to a three-dimensional via-based pathway through the bulk material. By creating vertical conductive pathways through the semiconductive layer, current can be collected efficiently without requiring extensive surface grids, thus preserving light exposure area while maintaining current collection capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances production yield and reduces costs by eliminating unnecessary production steps, increasing the efficiency of light-to-electricity conversion and allowing for non-shadowing busbars, thus improving the overall performance and efficiency of photovoltaic modules.
Implementation Method 1
laser scribing to create permanent metallization in semiconductive layers
Data Source
AI summary
A method to fabricate monolithically-integrated optoelectronic module apparatuses (100) comprising at least two series-interconnected optoelectronic components (104, 106, 108). The method includes deposition and scribing on an insulating substrate or superstate (110) of a 3-layer stack in order (a, b, c) or (c, b, a) comprising: (a) back-contact electrodes (122, 124, 126, 128), (b) semiconductive layer (130), and (c) front-contact components (152, 154, 156, 158). Via holes (153, 155, 157) are drilled so that heat of the drilling process causes a metallization at the surface of said via holes that renders conductive the semi-conductive layer's surface (132, 134, 136, 138) of said via holes, thereby establishing series-interconnecting electrical paths between optoelectronic components (104, 106, 108) by connecting first front-contact components (154, 156) to second back-contact electrodes (124, 126).