Photoelectric Thin-Film Sensor Structure for High Quantum Efficiency
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Solution Overview
Problem
Traditional indirect active pixel sensors require a large light-receiving area to achieve higher quantum efficiency, leading to increased sensor size.
Innovation Solution
The use of a photoelectric thin film transistor replaces the photodiode, with a structure comprising a base substrate, active layers, sources and drains, insulating layers, gates, and a scintillator layer, allowing for a smaller sensor size due to higher quantum efficiency and shared light processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a photodiode with larger light receiving area is used to achieve higher quantum efficiency, then the photoelectric conversion efficiency is improved, but the sensor size increases
Solution Approach 1:
The patent changes the fundamental parameter of the photoelectric conversion mechanism by replacing the photodiode structure with a photoelectric thin film transistor structure. This structural parameter change enables high quantum efficiency without requiring a large light receiving area, thus resolving the contradiction between quantum efficiency and sensor size.
Solution Approach 2:
The patent substitutes the traditional photodiode-based photoelectric conversion mechanism with a photoelectric thin film transistor mechanism. This substitution allows for higher quantum efficiency to be achieved through the transistor's inherent properties rather than through increasing the physical area, thereby reducing sensor size while maintaining or improving photoelectric conversion performance.
2Area of stationary object
If a photoelectric thin film transistor is used to replace photodiode to reduce sensor size, then the sensor size is reduced, but the device structure becomes more complex
Solution Approach 1:
The photoelectric thin film transistor serves multiple functions simultaneously: it acts as both the photoelectric conversion element and the signal amplification element. This multi-functionality reduces the need for separate photodiode and transistor structures, thereby simplifying the overall device structure while achieving compact sensor size.
Solution Approach 2:
The patent merges the photoelectric conversion function and the signal processing function into a single photoelectric thin film transistor structure. By combining these functions that were previously separated in traditional photodiode-based sensors, the device structure is simplified despite the advanced functionality required for compact design.
3Ease of manufacture
If traditional indirect active pixel sensor structure is used, then the manufacturing process is simpler, but the sensor size is larger
Solution Approach 1:
The patent changes the key structural parameter from traditional photodiode-based indirect active pixel sensor to photoelectric thin film transistor-based structure. This parameter change enables compact sensor size while the thin film fabrication processes maintain manufacturing simplicity through established semiconductor manufacturing techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the size of the sensor while maintaining high quantum efficiency and simplifying the manufacturing process, thereby improving productivity and reducing production costs.
Implementation Method 1
The scintillator layer 13 first absorbs X-rays to generate visible light
Implementation Method 2
the photodiode 12 converts a light signal into an electrical signal
Data Source
AI summary
A sensor, a manufacturing method thereof, and a photoelectric conversion device are provided. The sensor includes a first gate disposed on a second insulating layer, wherein a position of the first gate corresponds to a position of a first active layer and a material of the first gate is a metal material; a second gate disposed on the second insulating layer or between a second active layer and a base substrate, wherein a position of the second active layer corresponds to a position of the second gate.