Third Semiconductor Layer Protects Active Layer During Etching

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Solution Overview

Problem

The existing light emitting devices face issues with product yield due to damage of the active layer during the etching process, particularly when the third semiconductor layer is not provided, leading to failure in light generation and reduced yield.

Innovation Solution

Incorporating a third semiconductor layer between the active layer and the second conductive semiconductor layer, with a Ga-face surface, to prevent over-etching and protect the active layer, and forming a light extraction structure on the second conductive semiconductor layer with an N-face surface to enhance etching efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If the third semiconductor layer is not provided, then the device structure is simpler, but the active layer is damaged during etching process

Engineering Contradiction:

Improvestructure complexityVSAvoidetching precision

Core Design Contradiction:

Device complexityVSManufacturing precision

Solution Approach 1:

The third semiconductor layer is formed in advance before the etching process to serve as a protective barrier. This preliminary structural preparation prevents the active layer from being exposed to excessive etching, thereby solving the contradiction between structural simplicity and etching precision.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The third semiconductor layer acts as an intermediary protective layer between the second conductive semiconductor layer and the active layer. It mediates the etching process by being the first to undergo etching, thus protecting the active layer from damage while maintaining manufacturing precision.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Ease of manufacture

If the third semiconductor layer is not provided, then the manufacturing process is easier, but the product yield decreases

Engineering Contradiction:

Improvemanufacturing process easeVSAvoidproduct yield

Core Design Contradiction:

Ease of manufactureVSProductivity

Solution Approach 1:

The third semiconductor layer is incorporated into the manufacturing process as a preliminary protective structure before etching. Although this adds a step to the manufacturing process, it significantly improves product yield by preventing active layer damage, thus resolving the contradiction between ease of manufacture and productivity.

Inventive Principle:

Principle #10Preliminary action

3Productivity

If the light extraction structure is formed on N-face surface, then the etching efficiency is enhanced, but the structural complexity increases

Engineering Contradiction:

Improveetching efficiencyVSAvoidstructural complexity

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The light extraction structure is specifically formed on the N-face surface of the second conductive semiconductor layer, which has different etching properties. This local structural differentiation enhances etching efficiency at the specific location while maintaining overall structural manageability, resolving the contradiction between etching efficiency and structural complexity.

Inventive Principle:

Principle #3Local quality

Data Source

PatentUS9099610B2Light emitting device and light emitting device package

Publication Date: 2015.08.04 SUZHOU LEKIN SEMICON CO LTD

AI summary

Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a third semiconductor layer between the active layer and the second conductive semiconductor layer, and a light extraction structure on the second conductive semiconductor layer. A top surface of the third semiconductor layer has a Ga-face.