Through-DAF Via Assembly for Multi-Die Electrical Interconnects
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Solution Overview
Problem
Current techniques for assembling multi-die IC packages require the removal of die attach film (DAF), which is challenging due to difficulty in thickness targeting and the need to remove composite materials, increasing cost and complexity.
Innovation Solution
Incorporating die attach film with through-die attach film vias (TDVs) that are electrically coupled to conductive contacts, allowing for the integration of DAF in manufactured multi-die IC packages without the need for removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If die attach film is removed during processing, then electrical connections between dies can be established, but manufacturing complexity and cost increase due to difficulty in thickness targeting and composite material removal
Solution Approach 1:
The patent extracts the electrical connection function from the die attach film removal process by forming through-die vias that penetrate the DAF layer. This allows the DAF to remain in place while still establishing electrical connections through the vias, eliminating the need for DAF removal and simplifying the manufacturing process.
Solution Approach 2:
The patent implements a nested structure where through-die vias are formed within the die attach film layer, embedding conductive pathways inside the DAF matrix. This nested via structure allows electrical connections to be established while the DAF remains intact, resolving the contradiction between maintaining connections and simplifying manufacturing.
2Reliability
If die attach film is removed to establish connections, then electrical coupling between dies is achieved, but manufacturing cost increases due to additional processing steps
Solution Approach 1:
The patent extracts the electrical connection function from the DAF removal process by forming through-die vias. This extraction allows the DAF to remain as a structural layer while the vias provide the electrical coupling pathway, eliminating costly removal steps and reducing manufacturing expenses.
Solution Approach 2:
The patent performs preliminary action by forming through-die vias during the DAF application process itself, rather than requiring subsequent removal steps. This preliminary via formation integrates electrical connection establishment into the DAF deposition workflow, reducing overall manufacturing cost and complexity.
3Device complexity
If through-die attach film vias are formed, then DAF can be maintained in the assembly, but additional processing steps are required to create the vias
Solution Approach 1:
The patent merges the DAF deposition process with the via formation process by integrating via drilling or etching into the DAF application workflow. This combining of operations allows through-die vias to be created as part of the DAF processing sequence, adding minimal steps while maintaining the DAF structure.
Solution Approach 2:
The patent performs via formation as a preliminary action during or immediately after DAF deposition, before subsequent assembly steps. This preliminary via creation integrates the additional processing step into the existing manufacturing flow, minimizing overall process complexity and maintaining ease of manufacture.
Data Source
AI summary
Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface with first conductive contacts and an opposing second surface with second conductive contacts, in a first layer; a die attach film (DAF), at the first surface of the first die, including through-DAF vias (TDVs), wherein respective ones of the TDVs are electrically coupled to respective ones of the first conductive contacts; a conductive pillar in the first layer; and a second die, in a second layer on the first layer, wherein the second die is electrically coupled to the second conductive contacts on the second surface of the first die and electrically coupled to the conductive pillar.