Through Electrode Failure Detection in Stacked Semiconductor Devices

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Solution Overview

Problem

Current semiconductor devices face challenges in efficiently testing for open and short failures in through electrodes, which are crucial for ensuring the reliability and integration density of three-dimensional semiconductor devices.

Innovation Solution

The semiconductor device incorporates a test control circuit that electrically connects through electrodes to test resistors, allowing the detection of voltage levels at internal nodes to diagnose open and short failures by determining resistance values, thereby facilitating effective testing during both first and second test operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If through electrodes are used to vertically connect stacked semiconductor chips, then integration density is improved, but difficulty of detecting and measuring failures increases

Engineering Contradiction:
Improveintegration densityVSAvoiddifficulty of detecting failures
Core Design Contradiction:
Quantity of substanceVSDifficulty of detecting and measuring

Solution Approach 1:

The testing process is segmented into two distinct test operations: a first test operation that connects through electrodes to first and second test resistors to detect open failures, and a second test operation that connects through electrodes to a third test resistor to detect short failures. This segmentation allows each test operation to focus on specific failure modes, making detection easier despite the complexity of the three-dimensional structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Test resistors (first, second, and third test resistors) are introduced as intermediary elements to facilitate the detection of failures in through electrodes. These test resistors serve as mediators that enable voltage level measurements to indirectly detect open and short failures in the through electrodes, solving the measurement difficulty without requiring direct inspection of the through electrodes themselves.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If multiple test operations are implemented to detect both open and short failures, then reliability is improved, but device complexity increases

Engineering Contradiction:
ImprovereliabilityVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The first semiconductor chip is designed with multi-functionality, serving both as a functional device and as a testing platform. It includes test control circuits that can perform multiple testing functions (detecting open failures and short failures) and can connect through electrodes to different test resistors depending on the test operation required. This universality allows comprehensive reliability testing without requiring separate dedicated testing devices.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

Test resistors are pre-configured and connected to the first semiconductor chip before the actual through electrode functionality is needed. The test control circuits are also prepared in advance to perform both first and second test operations. This preliminary action allows failures to be detected before the device is fully assembled or deployed, improving reliability without adding operational complexity during normal device function.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enables precise detection of open and short failures in through electrodes, enhancing the reliability and efficiency of semiconductor device testing and integration, thereby improving the overall performance and density of three-dimensional semiconductor devices.

Implementation Method 1

The first semiconductor chip may detect voltage levels of first and second internal nodes to test open failures of the first and second through electrodes. The voltage levels of first and second internal nodes may be determined by resistance values of the first and second test resistors and the first and second through electrodes.

Methodology Applied
Scientific EffectElectrical Resistance: Electrical Resistance

Data Source

PatentUS11422181B2Semiconductor devices including through electrodes
Publication Date: 2022.08.23 SK HYNIX INC
  • US11422181B2 patent drawing
  • US11422181B2 patent drawing
  • US11422181B2 patent drawing

AI summary

A semiconductor device includes a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip and electrically connected to the first semiconductor chip by a first through electrode and a second through electrode. The first semiconductor chip may electrically connect the first through electrode to a third test resistor during a second test operation. The first semiconductor chip may detect a voltage level of the first internal node, which is determined by resistance values of the third test resistor and the first and second through electrodes, to test a short failure between the first and second through electrodes during the second test operation.