Through Electrode Inspection for Semiconductor Device Yield
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Solution Overview
Problem
Conventional solid-state imaging devices using the wafer level CSP method face challenges in detecting connection failures and ensuring the quality of through electrodes and holes during the manufacturing process, as electrical testing is inefficient and can only be performed after additional processing steps, leading to potential quality degradation and production loss.
Innovation Solution
The semiconductor device includes multiple through electrodes and holes that can be inspected from the surface, allowing for earlier detection of connection failures and quality issues through appearance checks, with thinner internal electrodes and protection films to facilitate surface inspection, enabling rework or process termination before further processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If electrical testing is performed to detect connection failures of through electrodes, then detection accuracy is improved, but the testing can only be performed after additional processing steps (forming metal wiring and insulating resin layer), causing loss of time and increasing device complexity
Solution Approach 1:
The patent applies preliminary action by performing appearance checks on through electrodes before forming the metal wiring layer and insulating resin layer. By inspecting the through electrodes at an earlier stage in the manufacturing process, the need for delayed electrical testing is eliminated, allowing defect detection to occur prior to subsequent processing steps and reducing overall manufacturing time.
2Measurement precision
If electrical testing is performed to ensure through electrode quality, then detection accuracy is improved, but device complexity increases due to additional processing steps
Solution Approach 1:
The patent extracts the inspection function from the later electrical testing stage and moves it to an earlier appearance check stage. By separating the visual inspection process from the subsequent metal wiring and insulating resin layer formation steps, the method eliminates the need for complex electrical testing procedures, reducing overall device complexity while maintaining effective quality control.
3Loss of time
If appearance checks are performed on through electrodes, then loss of time is reduced by enabling earlier detection, but manufacturing precision may be compromised without electrical testing
Solution Approach 1:
The patent performs appearance checks on through electrodes at a preliminary stage before subsequent processing steps. This early visual inspection allows for the detection of obvious defects such as missing or malformed through electrodes, enabling timely corrective actions while maintaining manufacturing precision through controlled inspection criteria.
Solution Approach 2:
The patent implements feedback by using the results of appearance checks to determine whether to proceed with subsequent processing steps or to perform rework. This feedback mechanism ensures that defective through electrodes are identified and corrected before metal wiring and insulating resin layers are formed, maintaining manufacturing precision while reducing time loss through early defect detection.
4Loss of substance
If rework or process termination is enabled based on appearance checks, then production loss is reduced, but additional inspection infrastructure is required
Solution Approach 1:
The patent applies self-service by enabling the manufacturing process to self-regulate based on appearance check results. The inspection system provides immediate feedback that allows the process to automatically determine whether to proceed, perform rework, or terminate, reducing the need for complex external inspection infrastructure and minimizing production loss through autonomous quality control decisions.
Data Source
AI summary
A semiconductor device includes: a semiconductor substrate, first and second internal electrodes provided on a surface of the semiconductor substrate; a first through electrode which penetrates through the semiconductor substrate in a thickness direction and is electrically connected to the first internal electrode; and a second through electrode connected to the second internal electrode, and the second internal electrode is thinner than the first internal electrode. The second through electrode may penetrate through the second internal electrode.