3D Through-Hole Capacitor Structure for High-Density Package Integration
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Solution Overview
Problem
There is a need for ultra-small and high-capacity capacitors that can be integrated into semiconductor packages to reduce signal paths and package size while maintaining high performance and reliability.
Innovation Solution
A capacitor design featuring a base with through-holes, multiple electrode layers, and dielectric layers, utilizing materials like silicon or anodic aluminum oxide, with specific dimensions and materials for the electrode and dielectric layers, and optional fillers to enhance capacitance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conventional capacitor designs are used in semiconductor packages, then basic functionality is maintained, but the package size remains large and signal paths are long
Solution Approach 1:
The capacitor structure embeds electrode layers and dielectric layers within through-holes of a base, creating a nested configuration where capacitive elements are contained within the base structure. This nesting approach reduces overall package volume while maintaining functional performance and shortening signal paths by integrating the capacitor directly into the semiconductor package substrate.
Solution Approach 2:
The invention transitions from planar capacitor layouts to a three-dimensional structure by utilizing through-holes that extend vertically through the base. Multiple electrode and dielectric layers are stacked sequentially within the through-holes, creating a vertical stacking arrangement that increases capacitance density without increasing planar footprint, thereby reducing package size while improving signal path efficiency.
2Volume of moving object
If capacitor size is reduced to meet ultra-small requirements, then package integration is improved, but capacitance capacity may be compromised
Solution Approach 1:
By stacking multiple electrode and dielectric layers vertically within through-holes, the design achieves high capacitance capacity in a compact volume. The sequential stacking of first electrode layer, first dielectric layer, and second electrode layer creates multiple capacitive elements in series within the same footprint, effectively increasing total capacitance without increasing planar dimensions.
Solution Approach 2:
The use of through-holes in the base structure creates a porous or hollow configuration that is efficiently utilized for embedding capacitive elements. The through-holes serve as containers for the stacked electrode and dielectric layers, maximizing the use of available space within the base and enabling high capacitance density in an ultra-small form factor.
3Quantity of substance
If complex capacitor structures are implemented to achieve high capacity, then capacitance increases, but manufacturing complexity and cost increase
Solution Approach 1:
The capacitor is divided into discrete segments including first electrode layer, first dielectric layer, and second electrode layer, which are sequentially formed within through-holes. This segmentation allows for systematic manufacturing where each layer can be deposited or formed in sequence using standard semiconductor fabrication techniques, simplifying the overall manufacturing process while achieving high capacitance capacity.
Solution Approach 2:
The base structure with through-holes serves multiple functions: it provides mechanical support, defines the capacitor geometry, and acts as a container for the electrode and dielectric layers. This multi-functionality reduces the need for additional separate components or complex assembly steps, thereby simplifying manufacturing while maintaining high capacitance capacity.
Data Source
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AI summary
A capacitor, according to an embodiment of the present invention, comprises: a base including a plurality of through-holes penetrating from a first surface to a second surface opposite to the first surface; a first electrode layer disposed on the first surface, the second surface, and inner walls of the plurality of through-holes of the base; a first dielectric layer disposed on the first electrode layer on the first surface, the second surface, and the inner walls of the plurality of through-holes of the base; and a second electrode layer disposed on the first dielectric layer on the first surface, the second surface, and the inner walls of the plurality of through-holes of the base.