Through-Hole Capacitor Layout for Reliable Substrate Integration
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Solution Overview
Problem
The formation of capacitive elements on the inner circumferential face of through-holes in semiconductor devices can lead to a decrease in the element region, potentially affecting the reliability and functionality of the device.
Innovation Solution
The capacitive element is connected to a through electrode via a conductor film that traverses the substrate along the side wall of the through-hole, with a dielectric film and sealing film to ensure equivalent plane sizes and secure contact, while parasitic capacitance is minimized, and the element is embedded in a trench to increase capacitance without increasing the element's size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the capacitive element is formed on the inner circumferential face of the through-hole, then the capacitive element can be connected to the through electrode, but the element region is decreased
Solution Approach 1:
The capacitive element is moved from the inner circumferential face of the through-hole to the rear surface of the substrate, utilizing the third dimension (depth/layer) rather than consuming planar area. This dimensional transition allows the capacitive element to be formed outside the through-hole region, thereby maintaining the element region while establishing connection through the through-electrode structure.
Solution Approach 2:
The capacitive element is embedded in a trench formed on the rear surface of the substrate, creating a nested structure where the capacitive element is housed within the trench. This nesting approach allows the capacitive element to be integrated into the substrate structure without occupying additional planar area, thus preserving the element region.
2Adaptability or versatility
If the capacitive element is formed on the inner circumferential face of the through-hole, then the capacitive element can be integrated with the through electrode, but the device complexity increases
Solution Approach 1:
The conductor film that forms the through-electrode is extended to also form the capacitive electrode on the rear surface of the substrate. This merging of the through-electrode and capacitive electrode into a single continuous conductor film structure simplifies the overall device structure by eliminating the need for separate formation processes and reducing the number of discrete components.
Solution Approach 2:
The conductor film serves multiple functions: it acts as the through-electrode for vertical connection and simultaneously forms the capacitive electrode when extended on the rear surface. This multi-functionality reduces the need for additional dedicated structures, thereby simplifying the device complexity while maintaining integration capability.
3Reliability
If the capacitive element is formed on the inner circumferential face of the through-hole, then the capacitive element can be connected to the through electrode, but the manufacturing precision requirements increase
Solution Approach 1:
The conductor film is formed to extend beyond the through-hole opening on the rear surface of the substrate before the through-hole is completely formed or while it is being formed. This preliminary extension provides a pre-formed capacitive electrode structure that simplifies subsequent connection processes and reduces the precision requirements for aligning and forming the capacitive element within the through-hole.
Solution Approach 2:
The capacitive element formation process is extracted from the through-hole interior and relocated to the rear surface of the substrate. This extraction eliminates the need for precise formation of capacitive elements within the confined and complex geometry of the through-hole inner circumferential face, thereby reducing manufacturing precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration maintains the element region, enhances reliability, suppresses noise, and stabilizes potential, while allowing for efficient integration with semiconductor chips and circuit boards.
Implementation Method 1
a capacitive element above the substrate... The capacitive element includes an upper electrode, a lower electrode, and a dielectric film between the upper electrode and the lower electrode
Implementation Method 2
The dielectric film comprises one or more of SiO2, Si3N4, HfO2, Al2O3, ZrO2, and HfAlO
Implementation Method 3
A first portion of the first conductor film traverses the substrate along a side wall of the first through-hole and a second portion of the first conductor film is in contact with the capacitive element
Implementation Method 4
The electronic device also includes a sealing film on the capacitive element. The sealing film includes one or more of Si3N4 and Al2O3. A third portion of the second conductor film is separated from the upper electrode by the sealing film
Data Source
AI summary
An electronic device includes a substrate, a first through-hole penetrating the substrate, a capacitive element above the substrate, and a first conductor film. A first portion of the first conductor film traverses the substrate along a side wall of the first through-hole and a second portion of the first conductor film is in contact with the capacitive element.