Through-Via Nanostructure Transistor Layout With Air-Gap Isolation
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Solution Overview
Problem
The integration of multi-gate devices in semiconductor manufacturing is challenging due to increased complexity and complexity in semiconductor manufacturing processes, which hinders the advancement of semiconductor ICs and devices.
Innovation Solution
The semiconductor structure includes a nanostructure transistor with a through via structure that connects top and bottom interconnects, reducing electrical routing complexity and forming an air gap to minimize coupling capacitance, utilizing techniques like photolithography and self-aligned processes for patterning and isolation layer formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate devices are integrated to improve gate control and reduce short-channel effects, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent segments the interconnect routing into multiple layers (top and bottom interconnects) and uses through-via structures to connect them, distributing the routing complexity across different spatial levels while maintaining improved gate control through the multi-gate device architecture
Solution Approach 2:
The patent transitions from planar routing to three-dimensional routing by introducing through-via structures that connect top and bottom interconnect layers, adding a vertical dimension to the interconnect architecture to manage routing complexity while preserving device performance
2Ease of manufacture
If conventional routing methods are used, then manufacturing process is simpler, but electrical routing complexity increases
Solution Approach 1:
The patent resolves electrical routing complexity by moving from two-dimensional planar routing to three-dimensional routing with through-via structures, enabling vertical connections between top and bottom interconnect layers while maintaining manufacturing feasibility through self-aligned processes
3Area of stationary object
If interconnects are placed closer to reduce area, then device size is reduced, but coupling capacitance increases
Solution Approach 1:
The patent introduces an air gap as an intermediary element between the top and bottom interconnects, providing electrical isolation that minimizes coupling capacitance while allowing the interconnects to be positioned in close proximity, thus reducing device area without increasing parasitic capacitance
Data Source
AI summary
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a channel member having a longitudinal axis in a first direction, and the channel member has a first portion and a second portion separated from each other by a blank region. The semiconductor structure also includes a first gate structure formed over the blank region and having a longitudinal axis in a second direction different from the first direction and an isolation structure formed in the blank region and abutting the first gate structure in the second direction. The semiconductor structure also includes a through via structure formed through the isolation structure. In addition, the through via structure includes a first conductive filling layer, and a first air gap is sandwiched between the first conductive filling layer and the isolation structure.