Through-Wafer Isolation Element for Thermal Management
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Solution Overview
Problem
Advanced technology nodes face challenges in maintaining electrical isolation within semiconductor wafers, particularly as distances between devices shrink, and existing dielectric materials like parylene have low thermal conductivity, hindering heat removal and mechanical support.
Innovation Solution
The integration of a semiconductor wafer with a dielectric layer and isolation elements formed by etching trenches and filling them with isolation dielectric material, which extends from the frontside to the backside surface, providing tunable high-voltage isolation and incorporating a thermal conductive layer for enhanced heat transfer and mechanical support.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing dielectric materials like parylene are used for isolation elements, then electrical isolation is achieved, but thermal conductivity is low which hinders heat removal
Solution Approach 1:
The patent applies composite materials by combining dielectric materials with low thermal conductivity (for electrical isolation) and materials with high thermal conductivity (for heat removal) within the isolation element structure. This allows the isolation element to simultaneously provide both electrical isolation and thermal management functions, resolving the contradiction between achieving reliable electrical isolation and enabling effective heat removal.
2Reliability
If isolation elements extend deep into the wafer to provide lateral isolation, then electrical isolation between devices is improved, but mechanical support and structural integrity are compromised
Solution Approach 1:
The patent uses composite materials in the isolation element to provide both electrical isolation and mechanical support. By combining materials with appropriate properties, the isolation element maintains structural integrity while extending into the wafer to provide lateral isolation between devices.
Solution Approach 2:
The isolation element is designed to perform multiple functions simultaneously: providing lateral electrical isolation between devices, maintaining mechanical support, and enabling heat removal. This multi-functional design resolves the contradiction by making the isolation element universally beneficial for both electrical and mechanical requirements.
3Productivity
If distances between devices are reduced to maintain advanced technology nodes, then device density increases, but maintaining electrical isolation becomes more difficult
Solution Approach 1:
The patent extends the isolation element vertically into the wafer (another dimension) to provide lateral isolation between devices. This vertical extension allows electrical isolation to be maintained even when horizontal distances between devices are reduced, enabling higher device density while preserving isolation reliability.
Solution Approach 2:
The use of composite materials in the isolation element enhances its effectiveness in providing electrical isolation at reduced device pitches, while simultaneously providing mechanical support and thermal management capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures effective electrical isolation, improved heat removal, and increased structural integrity, making it suitable for various process technologies such as digital, analog, and memory applications while maintaining economic efficiency.
Implementation Method 1
The isolation element has an isolation dielectric material and extends between a first side surface of the first wafer portion and a second side surface of the second wafer portion and from an extension plane of the frontside surface to an extension plane of the backside surface
Implementation Method 2
incorporating a thermal conductive layer for enhanced heat transfer and mechanical support
Implementation Method 3
The dielectric layer interfaces with the first wafer portion and with the second wafer portion each on the frontside surface
Data Source
AI summary
Disclosed herein is an integrated circuit (IC) comprising a semiconductor wafer, a dielectric layer, and an isolation element. The semiconductor wafer has a first wafer portion and a second wafer portion each extending from a frontside surface to a backside surface. The dielectric layer interfaces with the first wafer portion and with the second wafer portion each on the frontside surface. The isolation element has an isolation dielectric material, and the isolation element extends between a first side surface of the first wafer portion and a second side surface of the second wafer portion and from an extension plane of the frontside surface to an extension plane of the backside surface. Also disclosed herein is a system comprising the IC and a package substrate coupled to the IC.


