Titanium-Based Amorphous Alloy for Phase-Change Memory

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Solution Overview

Problem

Chalcogenide-based phase-change materials, such as Ge2Sb2Te5, face limitations in reset energy, cycle endurance, switching time, and thermal stability, hindering the performance of phase-change memory devices.

Innovation Solution

Titanium-based amorphous alloys, comprising titanium, antimony, and additional metallic or metalloid components like nickel, copper, and silicon, with a dopant, allowing for reversible phase changes between amorphous and crystalline states, are used as a phase-change material in memory devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If chalcogenide-based materials (GST) are used as phase-change materials, then the device structure is simple and manufacturing is easy, but reset energy is high and thermal stability is poor

Engineering Contradiction:
Improveease of manufactureVSAvoidreset energy
Core Design Contradiction:
Ease of manufactureVSUse of energy by moving object

Solution Approach 1:

The patent changes the material composition parameters by replacing chalcogenide-based GST materials with titanium-based amorphous alloys containing specific elements (Nb, Mo, Hf, Ta, W, Pt, Pd, Ir, Rh, Ru, Os, Cu, Ag, Au, Al, In, Ga, Bi, Zn, Cd, Ge, Si, B, P, S, Se, Te). This compositional parameter change enables lower reset energy while maintaining manufacturability through established sputtering and annealing processes.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material design by creating titanium-based amorphous alloys with multiple metallic and metalloid elements combined in specific ratios. This composite approach integrates the benefits of different elements: titanium provides base structure, transition metals enhance electrical properties, and metalloids control phase transition behavior, achieving both low reset energy and good manufacturability.

Inventive Principle:
Principle #40Composite materials

2Device complexity

If chalcogenide-based materials (GST) are used as phase-change materials, then the device structure is simple, but cycle endurance is limited

Engineering Contradiction:
Improvedevice complexityVSAvoidcycle endurance
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent modifies material parameters by substituting GST with titanium-based amorphous alloys having optimized compositional ratios. The specific element combinations and concentrations are tuned to enhance crystallization stability and phase transition reversibility, directly improving cycle endurance while keeping the device structure relatively simple.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

This principle applies indirectly by replacing the limited-life GST material with a more durable titanium-based alloy that offers superior cycle endurance, effectively creating a 'longer-living' phase-change material that maintains performance over extended operational periods.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Ease of manufacture

If chalcogenide-based materials (GST) are used as phase-change materials, then manufacturing is easy, but switching time is slow

Engineering Contradiction:
Improveease of manufactureVSAvoidswitching time
Core Design Contradiction:
Ease of manufactureVSLoss of time

Solution Approach 1:

The patent changes material parameters by selecting titanium-based amorphous alloys with specific compositional ratios that facilitate faster crystallization kinetics. The presence of certain metallic and metalloid elements lowers the activation energy for phase transitions, enabling quicker switching times while maintaining compatibility with existing manufacturing processes.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent exploits phase transition phenomena by designing titanium-based amorphous alloys with optimized glass transition temperatures (Tg) and crystallization temperatures (Tx). The material composition is tuned to create a larger ΔTx (difference between Tg and Tx), enabling rapid and complete phase transitions between amorphous and crystalline states, thus reducing switching time.

Inventive Principle:
Principle #36Phase transitions

4Device complexity

If chalcogenide-based materials (GST) are used as phase-change materials, then device structure is simple, but thermal stability is insufficient

Engineering Contradiction:
Improvedevice complexityVSAvoidthermal stability
Core Design Contradiction:
Device complexityVSStability of the object's composition

Solution Approach 1:

The patent modifies material composition parameters by replacing GST with titanium-based amorphous alloys containing specific elements in controlled ratios. This compositional adjustment increases the thermal stability of the amorphous phase by raising Tg and reducing the tendency for spontaneous crystallization, while maintaining relatively simple device structure.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses composite material strategy by combining titanium with multiple metallic and metalloid elements to create an amorphous alloy with enhanced thermal stability. The synergistic interaction between different elements stabilizes the amorphous phase at higher temperatures and improves resistance to thermal degradation, without significantly complicating the device architecture.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The titanium-based amorphous alloys enhance specific resistance and phase transition rates, improving the performance of phase-change memory devices by offering faster crystallization and higher resistance variations, thus overcoming the limitations of traditional chalcogenide materials.

Implementation Method 1

a phase-change memory device stores data by using a difference in resistances of an amorphous state and a crystalline state according to phase transition of a compound

Methodology Applied
Scientific EffectPhase transition: Phase Change

Implementation Method 2

a phase-change material layer... having high resistance in an amorphous state and having low resistance in a crystalline state

Methodology Applied
Scientific EffectResistivity change during phase transition: Electrical Resistance

Data Source

PatentUS11114616B2Ti-based amorphous alloy and phase change memory device applying the same
Publication Date: 2021.09.07 SAMSUNG ELECTRONICS CO LTD
  • US11114616B2 patent drawing
  • US11114616B2 patent drawing
  • US11114616B2 patent drawing

AI summary

Provided are a titanium-based amorphous alloy and a phase-change memory device in which the titanium-based amorphous alloy is applied to a phase-change layer. The titanium-based amorphous alloy may include titanium, antimony, and at least one metallic component. The titanium-based amorphous alloy may be configured as a phase-change material having a reversible phase change between a titanium-based amorphous alloy phase and at least one crystalline phase.