Tin Film-Forming Composition for Etch-Resistant Planarization
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Solution Overview
Problem
Conventional resist underlayer film materials face challenges with dry etching resistance, filling, and planarizing properties, especially at high temperatures, and have issues with storage stability and compatibility when containing metal elements.
Innovation Solution
A tin-containing compound with a specific structure represented by the general formula (M), which includes a tetravalent organotin compound with high crosslinking group density, is used in a composition for forming a metal-containing film, providing excellent solvent solubility, thermosetting properties, and thermal flowability, thereby enhancing dry etching resistance and filling and planarizing capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a metal compound is used for a resist underlayer film to improve dry etching resistance, then dry etching resistance is enhanced, but filling property deteriorates due to thermal shrinkage during baking
Solution Approach 1:
The patent modifies the metal compound by introducing specific ligand structures ( Formula 1) that change the thermal behavior parameters. The ligand contains flexible alkyl chains and specific functional groups that reduce thermal shrinkage while preserving etching resistance. This parameter change allows the material to maintain volume stability during high-temperature baking processes.
Solution Approach 2:
The patent creates a composite material system combining metal compounds with specifically designed organic ligands ( Formula 1). The ligand acts as a molecular spacer and thermal buffer, while the metal center provides etching resistance. This composite structure synergistically combines the advantages of both components while mitigating their individual disadvantages.
2Strength
If a metal compound is used for a resist underlayer film to improve dry etching resistance, then dry etching resistance is enhanced, but heat resistance deteriorates at high temperatures
Solution Approach 1:
The patent introduces ligands with specific thermal stability parameters ( Formula 1). The ligand structure includes aromatic rings and stable backbone structures that maintain structural integrity at high temperatures. This parameter change in the molecular structure enables the material to resist thermal degradation while preserving the metal-centered etching resistance.
Solution Approach 2:
The composite structure combines thermally stable organic ligands with metal centers. The ligand framework provides thermal stability and structural support, while the metal center maintains etching resistance. This division of functional roles allows simultaneous optimization of both heat resistance and dry etching resistance.
3Strength
If a metal compound is used for a resist underlayer film to improve dry etching resistance, then dry etching resistance is enhanced, but compatibility deteriorates when mixed with organic polymers
Solution Approach 1:
The patent modifies the chemical parameters of the metal compound by introducing organic ligands with specific functional groups ( Formula 1). These ligands provide solubility parameters that match common organic polymer matrices, enabling homogeneous mixing without phase separation. The ligand acts as a compatibility bridge between the inorganic metal center and organic polymer environment.
Solution Approach 2:
The organic ligand serves as an intermediary between the metal compound and the organic polymer matrix. It mediates the interaction by providing compatible chemical interfaces, preventing aggregation of metal compounds, and ensuring uniform distribution. This intermediary role resolves the incompatibility between inorganic metal compounds and organic polymer systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compound achieves improved dry etching resistance and maintains high filling and planarizing properties even after high-temperature baking, reducing volume shrinkage and ensuring precise pattern formation on substrates with complex structures.
Implementation Method 1
A compound that contains a metallic element such as barium, titanium, hafnium, zirconium, or tin has a higher absorbance of EUV light compared to an organic material that does not contain metal
Implementation Method 2
the compound has a high density of crosslinking groups, so that the compound has excellent thermosetting property
Implementation Method 3
the compound has excellent thermosetting property. Therefore, when the compound is contained in a composition for forming a metal-containing film, it is possible to provide a resist material that has excellent dry etching resistance and undergoes little volume shrinkage during baking
Data Source
AI summary
The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is represented by the following general formula (M). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.Tn-Sn-Qm (M)