TiN Film Fabrication via TiO Intermediate Layer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor fabrication methods face challenges in forming regular and continuous thin films, particularly TiN films, which are crucial for semiconductor device performance, due to issues with thickness control and irregular deposition, leading to potential damage to the semiconductor device and reduced reliability.
Innovation Solution
A method involving the formation of a TiO or TiON film followed by nitridation to create a thin and continuous TiN film, ensuring regular thickness and preventing damage to the semiconductor device, with the TiN film being used to fill recesses and serve as a conductive layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a thin TiN film is formed directly by deposition, then the film thickness can be controlled, but the film becomes irregular and discontinuous
Solution Approach 1:
The patent applies preliminary action by forming a TiO or TiON film before nitridation. This intermediate layer is deposited first, then transformed into TiN through nitridation treatment. This two-step approach allows the initial deposition to focus on continuity while the subsequent nitridation ensures uniform composition and properties.
Solution Approach 2:
The patent utilizes parameter changes by transforming the TiO/TiON film into TiN through nitridation. The chemical composition and physical properties of the film are changed by controlling the nitridation process parameters (temperature, time, atmosphere), thereby achieving the desired TiN film with regular thickness and continuous structure.
2Ease of manufacture
If conventional deposition methods are used for TiN films, then the process is simple, but the blocking insulating layer may be damaged
Solution Approach 1:
The patent uses TiO or TiON film as an intermediary layer between the deposition process and the final TiN film. This intermediate layer serves as a buffer that protects the blocking insulating layer from direct exposure to harsh deposition conditions, while still enabling the formation of the required TiN conductive layer through subsequent nitridation.
3Stability of the object's composition
If the continuous film thickness is increased to ensure coverage, then the film becomes more continuous, but the film thickness exceeds the required thin film specification
Solution Approach 1:
The patent segments the film formation process into two distinct stages: first forming a TiO or TiON film with sufficient thickness for continuity, then transforming it into TiN through nitridation. This segmentation allows the deposition stage to prioritize coverage while the transformation stage controls the final film properties and thickness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of a stable and regular TiN film, enhancing semiconductor device integration, stability, and reliability by preventing damage to the blocking insulating layer and ensuring regular feature formation, thus improving overall device performance.
Implementation Method 1
forming an aluminum oxide film along a surface of the interlayer insulating films
Implementation Method 2
nitriding the continuous film to form a TiN film
Data Source
AI summary
A method for fabricating a semiconductor device, the method including forming a mold structure on a substrate such that the mold structure includes alternately and repeatedly stacked interlayer insulating films and sacrificial films; forming a channel hole passing through the mold structure; forming a vertical channel structure within the channel hole; exposing a surface of the interlayer insulating films by removing the sacrificial films; forming an aluminum oxide film along a surface of the interlayer insulating films; forming a continuous film on the aluminum oxide film; and nitriding the continuous film to form a TiN film.