Tin Oxide Deposit Removal Using Activated Etchant Gas
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high purity tin oxide deposition with stable reactant compounds that maintain thermal stability and reactivity, while also addressing issues of reactor contamination and inefficient cleaning methods, particularly in ALD reactors for tin oxide fabrication.
Innovation Solution
The use of specific organometallic compounds, such as those of Formulas I and II, for deposition and etching processes, along with a novel etchant gas and additive for effective reactor cleaning, including etchant gases of the form A3OmXn and additives like CO or CO2, to enhance stability, reactivity, and cleaning efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional cleaning methods are used to remove tin oxide deposits from reactor chambers, then deposits can be removed, but the process is time-consuming and reduces reactor efficiency
Solution Approach 1:
The patent changes the chemical parameters of the cleaning process by using specific etchant gases (such as NF3, CF4, SF6) at controlled temperatures and pressures to achieve effective tin oxide removal. This allows faster cleaning cycles compared to conventional methods while maintaining reactor efficiency.
Solution Approach 2:
The patent replaces mechanical or manual cleaning methods with a chemical vapor phase etching process. The etchant gases chemically react with tin oxide deposits to form volatile products that can be evacuated, eliminating the need for time-consuming mechanical removal procedures.
2Reliability
If highly reactive etchant gases are used to remove tin oxide deposits, then cleaning effectiveness improves, but toxic or unstable chemicals are required
Solution Approach 1:
The patent employs etchant gases that can be handled in a controlled inert environment. The cleaning process occurs in a sealed reactor chamber where the etchant gases are contained and controlled, minimizing exposure risks. The byproducts of the etching reactions are non-toxic and can be safely evacuated.
Solution Approach 2:
The patent optimizes process parameters such as temperature, pressure, and gas flow rates to achieve effective cleaning with safer chemicals. By controlling these parameters, the reaction between etchant gases and tin oxide is enhanced while using less hazardous substances compared to conventional strong acids or bases.
3Manufacturing precision
If reactant compounds are made more reactive for better deposition, then deposition quality improves, but thermal stability decreases causing decomposition
Solution Approach 1:
The patent achieves high deposition quality by optimizing process parameters such as temperature, pressure, and gas flow rates rather than relying solely on highly reactive compounds. This allows the use of thermally stable reactants while maintaining excellent film quality through precise control of deposition conditions.
Solution Approach 2:
The patent introduces plasma or other activation methods as intermediaries to enhance the reactivity of thermally stable reactant compounds during deposition. The plasma activation enables high-quality film formation without requiring the reactants to be inherently highly reactive, thus preserving their thermal stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compounds provide stable deposition of high purity tin oxide films with reduced reactor contamination and faster throughput, while the etching process effectively removes deposits without using toxic or unstable chemicals, improving reactor efficiency and safety.
Implementation Method 1
allowing an etching reaction to proceed between said activated etchant gas and said tin oxide deposits
Implementation Method 2
activating said etchant gas either before or after said introduction
Data Source
AI summary
Specific organometallic compounds of Formula I: Qx-Sn-(A1R1′z)4-x or Formula II: Sn(NR2(CH2)nA2)2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and/or a process for dry etching a substrate using a particular etchant gas with a specific additive.