Tin-Perovskite Transistor Memory with Hollow Film Stabilization
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Solution Overview
Problem
Tin-based perovskite thin films are prone to oxidation and vacancy formation, leading to instability and poor electrical properties, which limits their use in semiconductor applications.
Innovation Solution
A diammonium organic cation is added to form a hollow structure in the tin-based perovskite thin film, combined with a metal fluoride compound to suppress oxidation and control hole concentration, resulting in a stable and uniform semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If tin-based perovskite thin film is used as semiconductor active layer, then memory characteristics and electrical properties are improved, but oxidation and vacancy formation occur leading to instability
Solution Approach 1:
A diammonium organic cation is introduced as an intermediary substance that occupies void spaces within the perovskite crystal lattice. This intermediary prevents oxidation and vacancy formation by blocking harmful environmental factors from reaching the tin-based perovskite structure, thereby maintaining stability while preserving memory characteristics
Solution Approach 2:
The diammonium organic cation creates a hollow structure within the perovskite lattice that acts as a protective porous framework. This structure provides both mechanical stability and chemical protection against oxidation, allowing the perovskite to maintain its functional properties without degradation
2Reliability
If diammonium organic cation is added to form hollow structure, then stability and electrical properties are improved, but device complexity increases
Solution Approach 1:
The chemical composition parameter of the perovskite structure is modified by incorporating diammonium organic cation in specific proportions. This parameter change creates a hollow structure that enhances stability while maintaining compatibility with existing manufacturing processes, avoiding excessive complexity
3Reliability
If metal fluoride compound is used to suppress oxidation, then electrical properties and memory characteristics are enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The metal fluoride compound is incorporated into the perovskite structure during the initial film formation process, performing preliminary oxidation suppression before the device is put into operation. This preliminary action reduces the need for post-manufacturing adjustments and maintains electrical properties without requiring excessive manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution stabilizes the tin-based perovskite thin film, enhancing its electrical properties and memory characteristics, enabling high-performance transistor memories with long information retention and low driving voltage operation.
Implementation Method 1
A diammonium organic cation is added to form a hollow structure in the tin-based perovskite thin film
Implementation Method 2
combined with a metal fluoride compound to suppress oxidation
Implementation Method 3
control hole concentration, resulting in a stable and uniform semiconductor layer
Data Source
Figure 1~2
Figure 3
Figure 4A
AI summary
Disclosed are tin-based perovskite field effect transistor memory and a method for manufacturing the same. In detail, a perovskite comprises at least one selected from the group consisting of cesium (Cs), methylammonium (MA), and formamidinium (FA); a compound represented by the structural formula 1; at least one selected from the group consisting of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); and tin (Sn). The transistor memory of the present invention can be utilized as a p-type transistor or a memory device, and can be utilized as a device for in-memory processing.