Tin-Based Photoresist Composition for Low-Roughness EUV Patterns
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Solution Overview
Problem
Current chemically amplified photoresists for semiconductor manufacturing face challenges such as limited resolution, increased line edge roughness, and decreased sensitivity due to acid-catalyzed reactions, especially in extreme ultraviolet lithography, which affects the formation of fine patterns and etch resistance.
Innovation Solution
A semiconductor photoresist composition incorporating an organometallic compound represented by Chemical Formula 1, [R1L1SnO(R2L2C(═O)O)]6, which provides excellent etch resistance, storage stability, and sensitivity, allowing for the formation of high-aspect-ratio patterns with improved resolution and reduced line edge roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If chemically amplified photoresist is used to achieve high sensitivity, then photospeed is improved, but line edge roughness increases and resolution deteriorates in small feature sizes
Solution Approach 1:
The patent employs a composite material system consisting of an organometallic compound (specifically a tin-based compound with formula R1L1SnO(R2L2C(=O)O)]6), a resin component, and a solvent. This composite approach combines the high EUV absorption and sensitivity of organometallic compounds with the processability and pattern formation capabilities of resin-based photoresists, achieving both high photospeed and low line edge roughness
Solution Approach 2:
The patent utilizes parameter changes by selecting specific organometallic compounds with optimized molecular structures and compositions. The tin-based compound is chosen for its superior EUV light absorption characteristics at 13.5 nm wavelength, and the resin component is selected with specific glass transition temperatures and molecular weights to control pattern formation and minimize acid-catalyzed blurring, thereby achieving high resolution while maintaining sensitivity
2Use of energy by moving object
If chemically amplified photoresist is used to achieve high sensitivity, then photospeed is improved, but resolution decreases due to acid catalyzed reaction blurring
Solution Approach 1:
The patent introduces a resin component as an intermediary between the organometallic compound and the final pattern. This resin acts as a matrix that supports the organometallic compound while providing structural integrity during processing. The resin component moderates the acid-catalyzed reaction effects, preventing excessive blurring while maintaining the sensitivity benefits of the organometallic compound
Solution Approach 2:
The composite material system combines the high EUV absorption of organometallic compounds with the structural stability of resin components. This combination enables the photoresist to maintain high sensitivity for achieving good photospeed while the resin matrix prevents acid-catalyzed blurring, thereby preserving resolution in small feature sizes
3Use of energy by moving object
If inorganic photoresist based on peroxopolyacids is used to improve etch resistance, then sensitivity is improved, but shelf-life stability decreases due to corrosive mixture
Solution Approach 1:
The patent employs organometallic compounds that are stable during storage and processing but undergo controlled decomposition or reaction upon EUV exposure. The tin-based compound maintains stability on the shelf but becomes reactive under EUV irradiation, enabling the photoresist to achieve high sensitivity without compromising long-term storage stability
Solution Approach 2:
The patent utilizes parameter changes by selecting organometallic compounds with specific stability profiles. The tin-based compound is chosen for its optimal balance between storage stability and EUV-induced reactivity. The compound remains stable under normal storage conditions but undergoes controlled chemical changes upon exposure to EUV light, enabling high sensitivity while maintaining shelf-life stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the formation of photoresist patterns with superior sensitivity and etch resistance, maintaining stability and resolution even at high aspect ratios, addressing the limitations of existing organic and inorganic resists.
Implementation Method 1
the inorganic composition contains an inorganic element having a higher EUV absorption rate than hydrocarbon, and thus, may secure sensitivity
Implementation Method 2
alkyl ligands are dissociated by light absorption or secondary electrons produced thereby, and are crosslinked with adjacent chains through oxo bonds
Implementation Method 3
alkyl ligands are dissociated by light absorption or secondary electrons produced thereby, and are crosslinked with adjacent chains
Implementation Method 4
negative tone patterning having resistance against removal by a developer composition
Data Source
AI summary
A semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1 and a solvent and a method of forming patterns using the same are disclosed.