Tin Precursor Composition for Low-Melting ALD Thin-Film Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing tin compounds used in thin-film production do not adequately support high-productivity and high-quality film formation due to insufficient vapor pressure and melting point characteristics.
Innovation Solution
A tin compound with a specific structure, represented by general formula (1), offering high vapor pressure and low melting point, suitable for use as a thin-film forming raw material, particularly in CVD methods like ALD.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional tin compounds are used as thin-film forming raw materials, then the production process can proceed, but the vapor pressure is insufficient and melting point is too high, resulting in low productivity
Solution Approach 1:
The patent modifies the physical and chemical parameters of the tin compound by introducing specific organic ligand structures (combining β-diketone and amine components) to achieve optimal vapor pressure and melting point characteristics for high-productivity thin-film deposition
Solution Approach 2:
The tin compound is designed as a composite structure with multiple ligand types (β-diketone ligand and amine ligand) coordinated to the tin atom, creating a molecule with tailored properties that balance vapor pressure and melting point for enhanced deposition efficiency
2Manufacturing precision
If conventional tin compounds are used as thin-film forming raw materials, then the production process can proceed, but the vapor pressure is insufficient, resulting in poor film quality
Solution Approach 1:
The patent optimizes the vapor pressure parameter by designing ligands with specific molecular weights and structures, enabling sufficient vaporization at deposition temperatures while maintaining film quality through controlled material delivery
3Productivity
If the vapor pressure is increased to improve productivity, then more material can be deposited, but the compound may decompose before deposition, reducing film quality
Solution Approach 1:
The patent adjusts the thermal stability parameters of the compound by selecting ligands with appropriate bond strengths to the tin atom, ensuring the compound remains stable at deposition temperatures while still achieving sufficient vapor pressure for high productivity
Solution Approach 2:
The patent creates different local environments within the molecule by using distinct ligand types (β-diketone and amine) with different thermal properties, where the combination provides both volatility for deposition and stability to prevent decomposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high-productivity production of high-quality thin-films, enhancing the suitability of the tin compound as a raw material for CVD methods, especially ALD.
Implementation Method 1
forming a thin-film containing a tin atom on a surface of a substrate through use of a raw material gas obtained by vaporizing the thin-film forming raw material
Implementation Method 2
forming a thin-film containing a tin atom on a surface of a substrate through use of a raw material gas obtained by vaporizing the thin-film forming raw material
Data Source
AI summary
A tin compound represented by formula (1) below, where R1 and R2 each independently represents an alkyl group having 1 to 5 carbon atoms or an alkylsilyl group having 3 to 12 carbon atoms, R3 and R4 each independently represents an alkyl group having 1 to 5 carbon atoms, and R5 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.