Tin Thin-Film Precursor Composition for High-Volatility Deposition
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Solution Overview
Problem
Existing tin compounds used in thin-film production do not meet the requirements for high-productivity and high-quality film formation, particularly in methods like CVD and ALD, due to insufficient vapor pressure and melting point properties.
Innovation Solution
A tin compound with a specific structure, represented by general formula (1), having alkyl or alkylsilyl groups, is developed to enhance vapor pressure and thermal stability, suitable for use as a thin-film forming raw material in CVD and ALD methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional tin compounds (e.g., tetrakis(N,N'-dimethylacetamidinato)tin(IV)) are used as thin-film forming raw materials, then the compound structure is stable, but the vapor pressure is insufficient and melting point is high, resulting in low productivity
Solution Approach 1:
The patent changes the physical parameters of the tin compound by modifying the ligand structure from acetamidinato to a combination of amido and alkoxide ligands. This structural parameter change results in a lower melting point and higher vapor pressure, enabling the compound to meet the temperature requirements for high-productivity CVD and ALD processes
Solution Approach 2:
The patent creates a composite ligand system around the tin center, combining different types of ligands (amido and alkoxide) with specific carbon atom counts. This composite molecular structure achieves optimal balance between thermal stability and volatility, resolving the contradiction between melting point and productivity
2Manufacturing precision
If conventional tin compounds are used as thin-film forming raw materials, then the compound can be handled, but the vapor pressure is insufficient, leading to poor film quality and low deposition rate
Solution Approach 1:
The patent modifies the molecular parameters of the tin compound by adjusting ligand types and carbon chain lengths. These parameter changes increase the vapor pressure to an optimal range that enables sufficient material transport for high-quality thin-film deposition while maintaining compound stability
3Productivity
If tin compounds with higher vapor pressure are designed, then productivity improves, but thermal stability may deteriorate
Solution Approach 1:
The patent optimizes the molecular parameters by selecting specific ligand combinations (amido and alkoxide with 1-5 carbon atoms) that create an optimal balance. The ligand structure provides sufficient thermal stability through strong Sn-Lg bonds while the molecular weight and intermolecular forces are controlled to maintain high vapor pressure, achieving both high productivity and thermal stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new tin compound enables high-productivity production of high-quality thin-films with improved vapor pressure and low melting point, making it suitable for CVD and ALD processes.
Implementation Method 1
a raw material gas obtained by vaporizing the thin-film forming raw material
Implementation Method 2
forming a thin-film containing a tin atom on a surface of a substrate through use of a raw material gas obtained by vaporizing the thin-film forming raw material
Data Source
AI summary
Provided is a tin compound, which is represented by the following general formula (1):in the formula (1), R1 and R2 each independently represent an alkyl group having 1 to 5 carbon atoms or an alkylsilyl group having 3 to 12 carbon atoms, R3 and R4 each independently represent an alkyl group having 1 to 5 carbon atoms, and R5 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.