Tin Precursor Ligand Design for EUV Film Purity and Yield
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Solution Overview
Problem
Current tin precursor compounds used in microelectronic device manufacturing, particularly for extreme ultraviolet (EUV) lithography, face challenges in achieving high yield, high purity, and efficient deposition processes.
Innovation Solution
The development of a composition comprising a compound of the formula [(R1)NC(R2)E]aSn(Q)b, where R1, R2, E, and Q can vary to form specific tin precursor compounds, which are used to form tin-containing films through deposition processes such as chemical vapor deposition (CVD) or atomic layer deposition (ALD).
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional tin precursor compounds are used in deposition processes, then deposition can be performed, but the yield and purity of the resulting tin-containing films are insufficient
Solution Approach 1:
The patent modifies the chemical parameters of the tin precursor compound by introducing specific ligands (carbene, imine, or alkoxide groups) coordinated to the tin center. This changes the chemical properties of the precursor to enable higher yield and purity film formation during deposition processes, directly addressing the manufacturing precision issue while maintaining deposition efficiency
2Productivity
If conventional tin precursor compounds are used, then deposition processes can proceed, but the yield of high-purity films is limited
Solution Approach 1:
The patent employs composite ligand systems coordinated to the tin center, combining carbene, imine, and/or alkoxide groups in specific configurations. This composite approach creates a synergistic effect that simultaneously enhances both the yield and purity of the deposited tin-containing films, resolving the contradiction between productivity and manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of high-purity tin-containing films with improved deposition efficiency, suitable for applications in EUV lithography and other microelectronic device fabrication processes.
Implementation Method 1
deposition processes such as chemical vapor deposition (CVD)
Implementation Method 2
atomic layer deposition (ALD)
Data Source
AI summary
Tin precursor compounds and related compositions and methods are provided. A composition comprises a compound of the formula:[(R1)NC(R2)E]aSn(Q)b,where: a+b=2 or 4; R1 independently comprises at least one of a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, or any combination thereof; R2 independently comprises at least one of a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, an amine, an alkoxide, or any combination thereof; E independently comprises N(R3), O, or S, where: R3 independently comprises at least one of a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, or any combination thereof; and Q independently comprises a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, an amine, an alkoxide, a halogen, or any combination thereof. Other precursor compounds, compositions, and methods are provided.