Tin Compound Precursors Balancing Thermal Stability and Vapor Pressure
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Solution Overview
Problem
Existing precursors for atomic layer deposition (ALD) methods lack high thermal stability and high vapor pressure, limiting the ability to form high-quality thin-films containing tin atoms.
Innovation Solution
A tin compound with a specific noble structure, represented by general formula (1), is used as a precursor, offering excellent thermal stability and high vapor pressure, enabling the production of high-quality thin-films containing tin atoms.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional precursors are used for ALD method, then the film formation process can proceed, but the thermal stability is insufficient and vapor pressure is low, resulting in poor film quality
Solution Approach 1:
The patent changes the chemical structure parameters of the precursor by introducing a noble structure with specific coordination geometry and ligand arrangement. This structural parameter change simultaneously improves thermal stability (prevent decomposition) and enhances vapor pressure (facilitate vaporization), resolving the contradiction between these two properties.
Solution Approach 2:
The precursor employs a composite molecular structure combining tin center with organic ligands in a noble configuration. This composite approach creates a molecule that exhibits both high thermal stability from the robust coordination framework and high vapor pressure from the optimized molecular weight and intermolecular interactions, enabling successful ALD film formation.
2Manufacturing precision
If conventional precursors are used, then film formation can occur, but residual carbon content remains high, reducing thin-film quality
Solution Approach 1:
The noble structure of the precursor changes the decomposition behavior during film formation. The specific coordination geometry and ligand arrangement promote complete decomposition and volatile byproduct formation, minimizing residual carbon incorporation in the thin-film. This parameter change in molecular structure directly improves manufacturing precision by reducing harmful residual carbon.
3Stability of the object's composition
If precursors with high thermal stability are used, then decomposition is prevented, but vaporization becomes difficult due to strong intermolecular forces
Solution Approach 1:
The noble structure optimizes the balance between intramolecular bond strength (providing thermal stability) and intermolecular interactions (affecting vaporization). The specific coordination geometry and ligand selection create a molecule that maintains structural integrity at elevated temperatures while having sufficient volatility for vapor deposition, resolving the contradiction between stability and vaporization temperature.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The tin compound allows for the formation of high-quality thin-films with reduced residual carbon content, suitable for ALD methods, due to its wide ALD window and ability to be vaporized at lower temperatures.
Implementation Method 1
The tin compound of the present invention is excellent in thermal stability and has a high vapor pressure
Implementation Method 2
subjecting the tin compound in the raw material gas to decomposition and/or a chemical reaction in the treatment atmosphere, to thereby produce a thin-film containing a tin atom on a surface of the substrate
Data Source
AI summary
The present invention provides a tin compound represented by the following general formula (1) (in the formula (1), R1 to R4 each independently represent a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, and R5 represents an alkanediyl group having 1 to 15 carbon atoms), a thin-film forming raw material including the compound, a thin-film formed by using the thin-film forming raw material, a method of using the compound as a precursor for producing the thin-film, and a method of producing a thin-film including: introducing a raw material gas obtained by vaporizing the thin-film forming raw material into a treatment atmosphere having a substrate set therein; and subjecting the tin compound in the raw material gas to decomposition and/or a chemical reaction in the treatment atmosphere, to thereby produce a thin-film containing a tin atom on a surface of the substrate.