Titanium Complex Precursors for Low-Temperature Conformal Thin Films
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Solution Overview
Problem
Existing methods for forming titanium-containing thin films in semiconductor manufacturing face challenges in achieving uniform deposition on complex three-dimensional surfaces at low temperatures without using oxidative gases, which can lead to resistivity increases and transistor failures.
Innovation Solution
The use of titanium complexes represented by a specific general formula, which are precursors for chemical vapor deposition (CVD) and atomic layer deposition (ALD), allowing deposition at low temperatures using reductive gases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If PVD method (sputtering) is used for thin film formation, then the process is simple and widely used, but uniform deposition on complex three-dimensional surfaces cannot be achieved
Solution Approach 1:
The patent replaces the mechanical physical vapor deposition process with a chemical vapor deposition process using titanium complexes as precursors. The titanium complex precursors decompose chemically on the substrate surface to form conformal titanium-containing thin films, eliminating the line-of-sight deposition limitation of sputtering and achieving uniform coverage on complex three-dimensional surfaces.
Solution Approach 2:
The patent changes the deposition temperature parameter to low temperatures (200°C or lower) to enable conformal film formation. By controlling the temperature parameter and using specific titanium complex precursors with appropriate volatility and decomposition characteristics, the process achieves both conformal deposition on complex surfaces and low-temperature operation.
2Manufacturing precision
If low temperature deposition (200°C) is used to achieve conformal films, then good continuity is obtained, but oxidative gases must be used which cause resistivity increase
Solution Approach 1:
The patent inverts the conventional approach by using reductive gases (such as ammonia, hydrogen, or hydrocarbons) instead of oxidative gases for low-temperature deposition. The titanium complex precursors decompose via reductive elimination or hydrogenation reactions rather than oxidation, preventing resistivity increase while maintaining conformal film continuity at 200°C or lower.
Solution Approach 2:
The patent creates an inert or reductive atmosphere during deposition using gases like nitrogen, argon, or reductive gases instead of oxygen-containing environments. This inert environment prevents unwanted oxidation of the deposited titanium films while enabling low-temperature conformal deposition, thus maintaining both film continuity and electrical properties.
3Productivity
If conventional titanium precursors are used, then deposition can proceed, but oxidative gases are required leading to resistivity issues
Solution Approach 1:
The patent changes the chemical composition parameters of the titanium precursors by designing specific organometallic complexes with ligands that facilitate reductive decomposition. These modified precursor structures enable decomposition via reductive pathways rather than oxidative pathways, maintaining deposition productivity while preventing resistivity increase in the resulting films.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of titanium-containing thin films, such as titanium nitride, at low temperatures without oxidative gases, ensuring conformal deposition and preventing resistivity issues, thereby enhancing semiconductor device reliability.
Implementation Method 1
a titanium complex represented by the general formula (1) is used in vapor deposition involving a chemical reaction
Implementation Method 2
film deposition method involving adsorption of the precursor onto the surface of the substrate followed by decomposition of the precursor, called atomic layer deposition (ALD)
Data Source
AI summary
A titanium complex useful for producing a titanium-containing thin film under low temperature deposition conditions without using an oxidative gas is provided. A titanium complex represented by the general formula (1) (wherein each of R1 and R2 is independently a C1-6 alkyl group which may be bonded with each other to form a ring, X is CR3 or a N atom, Y is CR4 or a N atom, Z is CR5 or a N atom, each of R3, R4 and R5 is independently a hydrogen atom or a C1-6 alkyl group, and n is an integer of from 1 to 3).