TMD GAA Transistor Structure With Channel-Last Damage Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The miniaturization of semiconductor processes poses challenges in applying existing silicon-based processes to transition metal dichalcogenide (TMD) materials, leading to potential damage and quality degradation during manufacturing.
Innovation Solution
A semiconductor device with a gate-all-around (GAA) structure is developed, utilizing TMD materials for channel layers and a channel last process to minimize damage during manufacturing, featuring a first and second channel layer surrounded by gate electrodes and a third gate electrode connecting them, with a high-k gate insulating layer to limit leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If existing silicon-based processes are applied to TMD materials, then manufacturing scalability is improved, but damage to TMD materials and quality degradation occur
Solution Approach 1:
The patent changes the manufacturing parameters by developing specialized processes for TMD materials rather than using standard silicon-based processes. This includes modifying deposition conditions, temperature parameters, and processing sequences to be compatible with TMD material properties, thereby preventing damage while maintaining manufacturing scalability.
Solution Approach 2:
The patent introduces intermediary layers and specialized process steps that act as mediators between standard manufacturing processes and TMD materials. These intermediaries protect the TMD materials from direct exposure to harmful process conditions while still enabling manufacturing scalability.
2Productivity
If transistor size is reduced for miniaturization, then device density is improved, but short-channel effects increase
Solution Approach 1:
The patent transitions from planar transistor structures to three-dimensional gate-all-around structures where the gate electrode completely surrounds the channel in all directions. This dimensional change provides superior gate control over the channel, effectively suppressing short-channel effects while enabling continued miniaturization and increased device density.
3Reliability
If gate-all-around structure is implemented, then gate control is improved, but manufacturing complexity increases
Solution Approach 1:
The patent segments the gate-all-around structure into multiple discrete gate electrodes that can be formed separately and then connected. This segmentation allows the complex three-dimensional structure to be built up step-by-step using standardized processing steps, reducing the apparent manufacturing complexity while maintaining the superior gate control of the complete GAA structure.
Data Source
AI summary
A semiconductor device may include a first gate electrode and a second gate electrode spaced apart from each other on a substrate, a first channel layer on one side of the first gate electrode, a second channel layer on one side of the second gate electrode, and a third gate electrode connecting the first gate electrode and the second gate electrode to each other. The first channel layer and the second channel layer may extend in a first direction and the first direction may be perpendicular to the substrate.