TMD Gate-Stack Bridge Structure for GAA MBCFET Scaling
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Solution Overview
Problem
The miniaturization of semiconductor processes poses challenges in applying existing silicon-based processes to transition metal dichalcogenide (TMD) materials, leading to potential damage and difficulty in maintaining the quality of TMD materials in multi-bridge channel field-effect transistors (MBCFETs) with gate-all-around (GAA) structures.
Innovation Solution
A semiconductor device is designed with a first and second gate stack, each comprising channel layers and gate electrodes, connected by a bridge, and surrounded by a gate insulating layer, utilizing TMD materials for the channel layers and TiN for the bridge, with symmetric or asymmetric configurations to enhance gate control and minimize damage during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If existing silicon-based processes are applied to TMD materials, then manufacturing process compatibility is improved, but damage to TMD materials occurs and material quality deteriorates
Solution Approach 1:
The patent modifies process parameters specifically for TMD materials, including using lower temperature processes (below 400°C), adjusted etching conditions, and modified deposition parameters to prevent damage while maintaining manufacturing feasibility
Solution Approach 2:
The patent introduces intermediate protective layers and buffer structures that mediate between the silicon-based process equipment and the sensitive TMD materials, preventing direct damage while allowing process compatibility
2Length of moving object
If transistor sizes are decreased for miniaturization, then device scaling is improved, but short channel effects increase and gate control deteriorates
Solution Approach 1:
The patent transitions from planar gate structures to three-dimensional gate-all-around structures, wrapping the gate electrode around the channel in multiple dimensions to enhance control over the charge carrier flow despite reduced channel length
Solution Approach 2:
The patent employs composite material structures including high-k dielectric materials combined with metal gate electrodes, and multi-layer channel structures with different TMD materials to improve gate control efficiency in scaled devices
3Reliability
If gate-all-around structures are implemented to reduce short channel effects, then gate control is improved, but manufacturing complexity increases
Solution Approach 1:
The patent divides the gate structure into segmented components including separate gate electrode layers, insulating layers, and channel layers that can be manufactured using modular process steps, reducing overall manufacturing complexity
Solution Approach 2:
The patent designs the gate-all-around structure to serve multiple functions simultaneously: electrical gating, mechanical support, and stress control, reducing the need for additional separate components and simplifying the overall device architecture
Data Source
AI summary
A semiconductor device may include a first gate stack, a second gate stack, and a bridge. The first gate stack may include a first channel layer and a plurality of first gate electrodes provided respectively on an upper portion of the first channel layer and a lower portion of the first channel layer. The second gate stack may include a second channel layer and a plurality of second gate electrodes provided respectively on an upper portion of the second channel layer and a lower portion of the second channel layer. The bridge may connect the first gate stack and the second gate stack to each other.