TMD Spin-Orbit Readout for Higher-Voltage MESO Logic

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Solution Overview

Problem

Magnetoelectric spin-orbit (MESO) logic devices produce relatively small output signals, making it challenging to cascade them into large-scale integrated circuits, and require in-plane spin polarization, limiting the choice of ferromagnets to those with in-plane anisotropy.

Innovation Solution

The use of perpendicular magnetic anisotropy (PMA) ferromagnets and p-type monolayer transition metal dichalcogenides or proximitized graphene for spin-to-charge conversion, leveraging the valley Hall effect to enhance output voltage and enable the use of magnets with PMA, which allows for smaller magnet sizes while maintaining energy barrier integrity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If conventional MESO logic devices use in-plane spin polarization for spin-to-charge conversion, then the device structure is simpler, but the output signal remains small and limits scalability

Engineering Contradiction:

Improvedevice structureVSAvoidoutput signal strength

Core Design Contradiction:

Device complexityVSReliability

Solution Approach 1:

The patent changes the spin polarization direction from in-plane to perpendicular orientation, and transitions from conventional materials to TMD materials with strong spin-orbit coupling. This parameter change enables larger output signals through enhanced spin-to-charge conversion efficiency while maintaining device feasibility

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structures combining TMD materials (such as MoS2, WS2) with ferromagnetic layers. This composite approach leverages the strong spin-orbit coupling of TMDs and the magnetic properties of ferromagnets to achieve both high output signals and scalable device performance

Inventive Principle:

Principle #40Composite materials

2Productivity

If conventional MESO devices are designed for cascading into large-scale integrated circuits, then integration density increases, but the small output signal makes cascading challenging

Engineering Contradiction:

Improveintegration densityVSAvoidsignal strength for cascading

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

By changing to perpendicular spin polarization and using TMD materials with large spin Hall angles and long spin diffusion lengths, the output signal strength increases sufficiently to drive cascaded devices, enabling high integration density while maintaining signal integrity across multiple stages

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The TMD material layer acts as an intermediary that enhances spin-to-charge conversion. Its strong spin-orbit coupling and favorable transport properties mediate between the magnetic layer and the readout circuit, boosting the output signal to levels suitable for cascading operations

Inventive Principle:

Principle #24Intermediary (Mediator)

3Area of moving object

If PMA magnets are used to reduce magnet size, then device area decreases, but maintaining energy barrier integrity becomes more difficult

Engineering Contradiction:

Improvemagnet sizeVSAvoidenergy barrier stability

Core Design Contradiction:

Area of moving objectVSReliability

Solution Approach 1:

The composite structure of TMD materials with ferromagnetic layers having PMA creates synergistic effects. The TMD layer provides strong spin-orbit coupling that enhances the energy barrier, allowing smaller magnet sizes while maintaining or even improving thermal stability and energy barrier integrity

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach increases the output voltage and enables the use of PMA magnets, facilitating the scaling of MESO devices without compromising performance, as the larger spin Valley diffusion length and spin Hall angle in these materials improve the output impedance and energy barrier stability.

Implementation Method 1

magnetoelectric switching is used to convert an input voltage/charge into a magnetic spin state (e.g., charge-to-spin conversion)

Methodology Applied

Scientific EffectMagnetoelectric effect: Magnetoelastic Effects

Implementation Method 2

spin-orbit transduction is used to convert the magnetic spin state back into an output charge/voltage (e.g., spin-to-charge conversion)

Methodology Applied

Scientific EffectValley Hall effect: Hall Effect

Implementation Method 3

a magnet between the first layer and the second layer, wherein the magnet has perpendicular magnetic anisotropy

Methodology Applied

Scientific EffectPerpendicular magnetic anisotropy: Anisotropy

Data Source

PatentUS20230320230A1Spin-orbit readout using transition metal dichalcogenides and proximitized graphene

Publication Date: 2023.10.05 INTEL CORP

AI summary

In one embodiment, an integrated circuit die includes: a first layer comprising a magnetoelectric material; a second layer comprising a monolayer transition metal dichalcogenide (TMD); a magnet between the first layer and the second layer, wherein the magnet has perpendicular magnetic anisotropy; a first conductive trace coupled to the first layer; and a second conductive trace coupled to the magnet.