Tunnel Magnetic Resistance Element Bonding Layer Thickness
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Solution Overview
Problem
Conventional tunnel magnetic resistance elements face issues with heat resistance, as the magnetic bonding layer denatures under high temperatures, leading to unstable synthetic bonding and inadequate magnetic resistance properties, particularly during magnetic heat treatment and when modules are mounted on substrates.
Innovation Solution
A tunnel magnetic resistance element with a magnetic bonding layer thickness of 1.0 nm to 1.3 nm, composed of Ru or Ta, is used, along with a layered structure including a fixed magnetic layer, a free magnetic layer, and an insulating layer, to enhance heat resistance and maintain excellent magnetic resistance properties at higher temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the magnetic bonding layer is made thinner to strengthen synthetic bonding and stabilize magnetic movement, then bonding strength and magnetic stability are improved, but heat resistance deteriorates as the layer denatures under high temperature
Solution Approach 1:
The patent changes the thickness parameter of the magnetic bonding layer from the conventional thin range (0.5 nm) to a specific thicker range (1.0 nm to 1.3 nm). This parameter change resolves the contradiction by providing sufficient thermal stability to prevent denaturation during high-temperature magnetic heat treatment, while still maintaining adequate synthetic bonding strength and magnetic movement stability for proper tunnel magnetic resistance element operation.
2Reliability
If the magnetic bonding layer is made thinner to achieve better magnetic properties, then magnetic resistance properties are improved, but reliability under high temperature conditions worsens
Solution Approach 1:
The patent optimizes the thickness parameter of the magnetic bonding layer to 1.0 nm to 1.3 nm, which is thicker than conventional designs. This parameter optimization ensures that the layer maintains its structural integrity and magnetic bonding function during high-temperature magnetic heat treatment processes, thereby achieving reliable magnetic resistance properties without denaturation or degradation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The increased thickness of the magnetic bonding layer stabilizes the bonding and maintains high sensitivity and magnetic resistance properties, even after magnetic heat treatment, resulting in improved heat resistance and TMR ratio performance.
Implementation Method 1
The resistance of the insulating layer is changed by the tunnel effect according to a difference in the angle between the direction of the magnetization of the fixed magnetic layer and the direction of magnetization of the free magnetic layer
Implementation Method 2
a magnetic bonding layer is placed between a ferromagnetic layer joined to the insulating layer and the soft magnetic layer. With this, the bonding of the solid state properties between the magnetic tunnel junction and the soft magnetic material can be eliminated while using the synthetic bonding which generates only the magnetic bonding
Data Source
AI summary
A tunnel magnetic resistance element includes the following, a fixed magnetic layer with a fixed direction of magnetization, a free magnetic layer in which the direction of magnetization changes, and an insulating layer which is positioned between the fixed magnetic layer and the free magnetic layer. The fixed magnetic layer, the free magnetic layer, and the insulating layer form a magnetic tunnel junction. A resistance of the insulating layer changes by a tunnel effect according to a difference in an angle between the direction of magnetization of the fixed magnetic layer and the direction of magnetization of the free magnetic layer. The free magnetic layer includes a ferromagnetic layer, a soft magnetic layer, and a magnetic bonding layer placed in between. Material of the magnetic bonding layer include Ru or Ta, and a layer thickness is 1.0 nm to 1.3 nm.