A multiple hard mask stack enables sub-20nm MTJ patterning via selective plasma etching.
Patterned plasmon antennas absorb light to selectively heat anti-ferromagnetic layers, enabling multi-directional pinning without high laser power.
A chromium capping layer diffuses into a magnetic tunnel junction pinning layer during annealing to enhance thermal stability.
A magnetic memory element uses a composite perpendicular enhancement layer to stabilize magnetization in free and reference layers.
An insulating layer blocks phonons between ferromagnetic layers, retaining heat to reduce switching current requirements in compact non-volatile memory devices.