Tunneling Magneto-Resistor Position Sensing Mechanism
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Solution Overview
Problem
Existing position sensing technologies, particularly those using Hall sensors, face limitations in low power consumption and high sensitivity, leading to increased assembly complexity and reduced accuracy due to the need for precise alignment of discrete sensing components on different planes.
Innovation Solution
A position sensing mechanism utilizing tunneling magneto-resistors with perpendicular magnetic moments in a single structure for both absolute and incremental column sensing, allowing for integrated sensor formation on a base plate, eliminating the need for separate assembly and alignment of sensing elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If Hall sensors are used for position sensing, then position detection capability is provided, but power consumption increases and sensitivity decreases
Solution Approach 1:
The patent changes the sensing mechanism from Hall effect to tunneling magneto-resistance effect, fundamentally altering the physical parameter used for sensing. This enables high sensitivity position detection with low power consumption by utilizing the quantum tunneling magneto-resistance effect instead of the Hall effect
2Measurement precision
If discrete sensing elements are assembled on different planes, then absolute and incremental column sensing is achieved, but assembly complexity increases and alignment accuracy deteriorates
Solution Approach 1:
The patent merges the absolute column sensing element and incremental column sensing element into a single integrated structure on the same plane. This integration eliminates the need for separate assembly and alignment of discrete components on different planes, reducing assembly complexity while maintaining sensing accuracy
Solution Approach 2:
The sensing element structure is designed to perform multiple functions simultaneously - both absolute position sensing and incremental position sensing are achieved through the same integrated sensing elements on the base plate, eliminating the need for separate sensing components
3Ease of manufacture
If sensing elements are assembled as independent discrete parts, then flexibility in component selection is provided, but assembly costs increase and manufacturing precision requirements worsen
Solution Approach 1:
The patent combines multiple sensing elements into a single integrated structure that is directly formed on the base plate. This eliminates the need for separate assembly operations and precise alignment procedures, reducing both assembly costs and manufacturing precision requirements while maintaining sensing performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances sensing accuracy and reduces assembly costs by integrating sensing elements on a common plane, improving the yield and reliability of position sensing while maintaining low power consumption and high sensitivity.
Implementation Method 1
a magneto-resistive unit in the reading element for sensing signals of the signal source is a tunneling magneto-resistor (TMR)
Data Source
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AI summary
A position sensing mechanism provided by the invention comprises an encoding element as a sensing signal source, a reading element for sensing signals of the signal source, and a processing unit for receiving and analyzing sensing signals output by the reading element, the position sensing mechanism has a main technical feature lying in a magneto-resistive unit in the reading element for sensing signals of the signal source being a tunneling magneto-resistor (TMR), and two layers of magnetic moments of a reference layer and a free layer of the tunneling magneto-resistor being perpendicular to each other, and in the reference layer and the free layer with the magnetic moments being perpendicular to each other, the magnetic moment of one of the layers is parallel to a film surface, and the magnetic moment of the other layer is perpendicular to the film surface.