High-Voltage Transistor Field Plate Layout for Hot Carrier Control
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Solution Overview
Problem
High-voltage transistors in semiconductor devices face challenges with hot carrier effects, leading to reduced breakdown voltage and performance, particularly in high-voltage applications.
Innovation Solution
A semiconductor device design featuring a gate structure, doped regions, an isolation structure, an insulating layer, and a field plate, where the insulating layer extends between the gate and isolation structures, and the field plate is equipotential with the gate, dispersing the electric field and reducing the hot carrier effect.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional high-voltage transistor structure is used, then the device can handle high voltages, but hot carrier effects reduce breakdown voltage and performance
Solution Approach 1:
An insulating layer is introduced as an intermediary between the gate structure and the isolation structure. This insulating layer mediates the electric field distribution, preventing direct interaction that causes hot carrier effects while maintaining high voltage handling capability. The field plate extending over the insulating layer further controls the electric field distribution to reduce hot carrier generation.
Solution Approach 2:
The patent modifies the electrical parameters by creating an equipotential region through the field plate connected to the gate potential. This changes the electric field distribution pattern, reducing peak fields that cause hot carrier effects while maintaining the necessary voltage blocking capability. The insulating layer thickness and material properties are optimized to achieve the desired field distribution.
2Reliability
If the isolation structure is made larger to reduce hot carrier effects, then breakdown voltage improves, but chip area increases
Solution Approach 1:
The solution moves from purely lateral (2D) isolation structure scaling to a three-dimensional approach by introducing vertical insulation layers and field plates. The insulating layer extends vertically between the gate and isolation structure, and the field plate projects over this insulating layer, creating a 3D electric field control structure that achieves better breakdown voltage without increasing lateral chip area.
Solution Approach 2:
The patent uses a composite structure combining conductive materials (gate, field plate) with insulating materials (insulating layer between gate and isolation structure). This composite approach allows the field plate to be electrically connected to the gate while physically separated by the insulating layer, enabling electric field control that improves breakdown voltage without requiring a larger isolation structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances breakdown voltage and performance by reducing the hot carrier effect, while allowing for a smaller isolation structure, thus reducing chip area and improving device efficiency.
Implementation Method 1
the insulating layer extends continuously from a portion of a top surface of the gate structure to a portion of a top surface of the isolation structure
Implementation Method 2
The field plate is located on the insulating layer and has the same potential as the gate structure
Data Source
AI summary
A semiconductor device includes a gate structure, a first doped region, a second doped region, an isolation structure, an insulating layer and a field plate. The gate structure is located on a substrate. The first doped region and the second doped region are located at two sides of the gate structure. The isolation structure is located in the substrate between the first doped region and the second doped region, and is separated from the gate structure by a non-zero distance. The insulating layer extends continuously from a portion of a top surface of the gate structure to a portion of a top surface of the isolation structure. The field plate is located on the insulating layer and has the same potential as the gate structure.