Transistor Spacer Materials for Lower Junction Temperature
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Solution Overview
Problem
The challenge of effectively reducing junction temperatures and improving thermal dissipation in semiconductor circuits, particularly in transistors, is exacerbated by the use of conventional materials with low thermal conductivity, leading to increased power consumption and reduced performance as device dimensions shrink.
Innovation Solution
Incorporation of spacers and isolation regions made from materials with higher thermal conductivity, such as silicon carbide (SiC), hexagonal boron nitride (h-BN), and aluminum nitride (AlN), in the semiconductor circuit structure to enhance heat removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional materials with low thermal conductivity are used in transistor spacers, then manufacturing is simpler and cost is lower, but junction temperature increases and device performance deteriorates
Solution Approach 1:
The patent changes the thermal conductivity parameter of spacer materials from conventional low values (SiO2, Si3N4) to high values (SiC, AlN, h-BN, diamond), directly addressing the temperature management issue while maintaining the same structural role of spacers
Solution Approach 2:
The patent employs composite material strategies by combining high-thermal-conductivity materials with existing transistor structures, and in some embodiments uses multiple different high-thermal-conductivity materials in different regions to optimize both thermal management and device performance
2Productivity
If device dimensions are shrunk to satisfy Moore's Law, then integration density increases, but thermal dissipation capability deteriorates and power consumption increases
Solution Approach 1:
The patent applies local quality by placing high-thermal-conductivity materials specifically in regions where heat generation and dissipation are critical (near source/drain junctions, in spacer regions adjacent to active areas), rather than uniformly throughout the entire device, thus targeting thermal management where it is most needed
Solution Approach 2:
The high-thermal-conductivity spacer materials act as thermal intermediaries or heat sinks that conduct away excess heat from the source/drain junctions, preventing heat accumulation and enabling higher integration densities without proportional increases in power consumption
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of these high-thermal conductivity materials significantly reduces junction temperatures, improving transistor performance and efficiency by enhancing heat dissipation capabilities.
Implementation Method 1
a thermal conductivity of the first spacer or the second spacer is higher than the thermal conductivity of silicon nitride (Si3N4)
Data Source
AI summary
A semiconductor circuit structure includes a semiconductor substrate with an original semiconductor surface, an active region within the semiconductor substrate, and a transistor formed based on the active region. The transistor includes a gate structure, a first spacer neighboring to a first sidewall of the gate structure, and a second spacer neighboring to a second sidewall of the gate structure. Wherein a thermal conductivity of the first spacer or the second spacer includes is higher than the thermal conductivity of silicon nitride (Si3N4).