Transistor Surface Patterning to Suppress Carrier Traps
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Solution Overview
Problem
The production of transistors using photoresponsive materials with nitrobenzyl groups faces challenges such as carrier traps and surface defects due to hydrophilic groups, leading to unstable transistor behavior and adhesion issues with upper layers.
Innovation Solution
A method involving the formation of a photoresponsive film with a nitrobenzyl group, selective exposure to create hydrophilic and water-repellent areas, followed by plasma irradiation and surface treatment to form modified layers, which improves wettability and adhesion, reducing carrier traps and enhancing transistor characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a photoresponsive film with nitrobenzyl group is used to form patterns, then surface characteristic differentiation is achieved, but carrier traps and surface defects occur due to hydrophilic groups
Solution Approach 1:
The harmful hydrophilic groups (carboxyl, amino, hydroxyl) are selectively removed from the photoresponsive film surface through plasma treatment. This extraction eliminates the source of carrier traps while preserving the beneficial surface characteristic differentiation achieved by the photoresponsive film.
Solution Approach 2:
The surface properties of the photoresponsive film are modified by changing the chemical composition through plasma treatment. This transforms the surface from having hydrophilic groups to having improved adhesion properties without compromising the patterned surface characteristics.
2Ease of manufacture
If hydrophilic groups are present on the substrate surface, then surface treatment is simplified, but adhesion with upper layers deteriorates
Solution Approach 1:
The plasma treatment process converts the harmful hydrophilic groups into beneficial surface characteristics. The same plasma process that removes harmful groups also creates a surface with improved adhesion properties, turning a detrimental effect into a beneficial one.
3Strength
If plasma irradiation is applied to remove water-repellent film, then adhesion is improved, but process complexity increases
Solution Approach 1:
The plasma treatment step serves multiple functions simultaneously: it removes harmful hydrophilic groups, eliminates water-repellent film, and creates a surface with improved adhesion properties. This consolidation of multiple functions into a single step reduces overall process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses carrier traps and improves adhesion, crystallinity, and orientation, resulting in enhanced transistor performance and stability by modifying the substrate surface properties.
Implementation Method 1
selectively exposing the photoresponsive film to dissociate the photoresponsive group in an exposed area
Implementation Method 2
subjecting the unexposed area to a plasma irradiation to remove a water-repellent film
Data Source
AI summary
Provided is a transistor production method including: forming a gate electrode on an object by using a conductive material; forming an insulating film on the gate electrode; forming a photoresponsive film on the insulating film by using a material containing a compound having a photoresponsive nitrobenzyl group; selectively exposing the photoresponsive film to dissociate the photoresponsive group in an exposed area, forming a pattern including a hydrophilic exposed area and a water-repellent unexposed area, disposing a conductive material in the exposed area to form a source electrode and a drain electrode, and forming a modified layer by subjecting the unexposed area to a plasma irradiation to remove a water-repellent film and further subjecting to a surface treatment; and forming a semiconductor layer on the modified layer.