Transparent Electrode Wiring in Solid-State Imaging Pixels
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing solid-state imaging devices have complex wiring structures and high wiring resistance due to the use of metal wiring materials for light-blocking and electrical conductivity, which complicates the routing of wiring lines and increases resistance.
Innovation Solution
A solid-state imaging device with a simplified wiring structure using a transparent electrode material for both the pixel section and the wiring line, eliminating the need for coupling holes and reducing resistance by directly coupling the transparent electrode and coupling section without routing through the protective film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal wiring material is used for the light-blocking film to enable electrical conductivity, then the wiring line can be formed, but the wiring structure becomes complicated and wiring resistance increases
Solution Approach 1:
The patent merges the light-blocking film and wiring line into a single integrated structure. The transparent electrode material serves dual functions: blocking light from reaching the pixel section while simultaneously conducting electrical signals from the photoelectric conversion element to the coupling section. This eliminates the need for separate metal wiring layers and coupling holes, simplifying the overall wiring structure.
Solution Approach 2:
The transparent electrode material is designed to perform multiple functions simultaneously: it acts as a light-blocking layer to prevent stray light from affecting pixel performance, serves as an electrical conductor to transmit signals, and provides a simplified routing path that reduces wiring resistance. This multi-functional design replaces the traditional multi-layer metal wiring structure.
2Reliability
If the wiring line is routed through the protective film to connect the second electrode and coupling section, then electrical connection is achieved, but the wiring resistance increases
Solution Approach 1:
The patent changes the routing dimension by forming the wiring line within the same layer as the transparent electrode, rather than routing through vertical coupling holes in the protective film. This in-plane routing approach shortens the electrical path length and reduces the number of interfaces, thereby lowering wiring resistance and improving signal transmission efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution simplifies the wiring structure and reduces wiring resistance, enabling uniform photoelectric conversion across the pixel section while improving manufacturing efficiency and environmental tolerance.
Implementation Method 1
an organic photoelectric conversion film formed on the transparent semiconductor on a side opposite to the insulator
Data Source
AI summary
A solid-state imaging device includes: a pixel section that includes a transparent semiconductor formed in an effective pixel region of an insulator, an organic photoelectric conversion film formed on the transparent semiconductor on a side opposite to the insulator, and a transparent electrode formed on the organic photoelectric conversion film on a side opposite to the transparent semiconductor; a coupling section disposed in the insulator in a peripheral region around the effective pixel region, the coupling section being coupled to a circuit that supplies electricity to the transparent electrode; and a wiring line that electrically couples the transparent electrode and the coupling section to each other, and is formed by a transparent electrode material.