Transparent Electrode Recess in Capacitor Region
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional organic light emitting display manufacturing methods often result in shorts and defects due to the protrusion of transparent electrodes in the capacitor region, leading to electrostatic discharge and electrical shorts during the formation of interlayer dielectric films.
Innovation Solution
The method involves forming a transparent electrode with a smaller cross-sectional width than the semiconductor layer, recessed inwardly by d1 + d2, to prevent sagging and conductive byproducts, using a first etching stopper film to selectively etch the gate electrode and then the transparent electrode, ensuring the electrode is inwardly recessed relative to the gate electrode, thus minimizing the risk of electrical shorts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If blanket etching of transparent electrode and gate electrode is performed using a single etching stopper film, then manufacturing process is simplified, but transparent electrode protrudes outwardly relative to gate electrode causing electrical shorts
Solution Approach 1:
The patent divides the etching process into two separate steps: first etching the gate electrode using a first etching stopper film, then etching the transparent electrode using a second etching stopper film. This segmentation prevents the transparent electrode from protruding outwardly relative to the gate electrode, thereby eliminating the risk of electrical shorts while maintaining manufacturing efficiency.
Solution Approach 2:
The patent applies a first etching stopper film before etching the gate electrode, and then applies a second etching stopper film before etching the transparent electrode. This preliminary action of applying selective stopper films ensures that each electrode is etched to the correct depth and position, preventing the transparent electrode from protruding and causing electrical shorts.
2Manufacturing precision
If transparent electrode is formed wider than semiconductor layer, then capacitor region is well-formed, but transparent electrode sags downwardly or contacts semiconductor layer causing shorts
Solution Approach 1:
The patent applies a second etching stopper film on the transparent electrode before etching the interlayer dielectric film. This preliminary action prevents the transparent electrode from sagging downwardly or contacting the semiconductor layer during subsequent processing, thereby preventing electrical shorts while maintaining proper capacitor region formation.
Solution Approach 2:
The second etching stopper film acts as an intermediary protective layer between the transparent electrode and the etching process. This intermediary prevents the transparent electrode from sagging or contacting the semiconductor layer, thereby eliminating the risk of electrical shorts while allowing the capacitor region to be properly formed.
3Productivity
If interlayer dielectric film is etched in capacitor region, then subsequent processing is enabled, but transparent electrode byproduct is generated causing electrical shorts
Solution Approach 1:
The second etching stopper film serves as an intermediary protective layer during the etching of the interlayer dielectric film in the capacitor region. This intermediary prevents the etching process from generating transparent electrode byproducts that could cause electrical shorts, while still enabling subsequent processing to proceed efficiently.
Solution Approach 2:
The patent maintains processing continuity by applying the second etching stopper film, which protects the transparent electrode during interlayer dielectric film etching. This allows the manufacturing process to continue without interruption while preventing the generation of conductive byproducts that would cause electrical shorts.
Data Source
Figure 1a~1b
Figure 2a~3
Figure 4~6
AI summary
An organic light emitting display device includes a substrate including a capacitor region (C), a buffer layer (12) disposed on the substrate (10), a semiconductor layer (14) disposed on the buffer layer of the capacitor region, a gate insulation film (16) formed on the semiconductor layer, and a transparent electrode (18) formed on the gate insulation film of the capacitor region, wherein a cross-sectional width of the transparent electrode is smaller than a width of the semiconductor layer.