Transparent Semiconductor Layer for Optical Sensor and TFT Integration
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Solution Overview
Problem
The integration of optical sensor devices and thin film transistor devices in display panels faces challenges due to differences in their fabrication processes, leading to complex steps and potential damage to the optical sensor devices.
Innovation Solution
A method is developed to fabricate optical sensor devices and thin film transistors using a shared patterned transparent semiconductor layer, where a modification process introduces gas to convert the semiconductor pattern into a top or bottom electrode, simplifying the process and enhancing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate fabrication processes are used for optical sensor devices and thin film transistor devices, then device functionality is ensured, but process complexity increases
Solution Approach 1:
The patent merges the fabrication processes of optical sensor devices and thin film transistor devices into a single integrated process. The transparent semiconductor layer serves dual purposes: as a photosensitive layer for optical sensors and as an electrode material after modification. This consolidation eliminates the need for separate fabrication lines and reduces overall process complexity while maintaining device functionality.
Solution Approach 2:
The transparent semiconductor layer is designed to perform multiple functions throughout the fabrication process. Initially, it serves as a photosensitive layer for optical sensor formation. After gas modification, it transforms into a conductive electrode. This multi-functionality allows a single layer to fulfill different roles in different device regions, simplifying the overall fabrication process.
2Reliability
If separate fabrication processes are used for optical sensor devices and thin film transistor devices, then device-specific requirements are met, but manufacturing steps increase
Solution Approach 1:
The patent combines multiple manufacturing steps into a unified process flow. The same transparent semiconductor layer is processed through identical fabrication steps regardless of whether it will become an optical sensor component or a transistor electrode. This merging of steps directly increases manufacturing efficiency by reducing the total number of operations required.
Solution Approach 2:
The patent employs parameter changes through gas modification to transform the transparent semiconductor layer's properties. By controlling gas exposure conditions, the same layer can be converted into a conductive electrode when needed, allowing flexible adaptation to different device requirements without adding manufacturing steps.
3Stability of the object's composition
If conventional fabrication methods are used, then process robustness is maintained, but damage to optical sensor devices occurs
Solution Approach 1:
The transparent semiconductor layer acts as an intermediary that protects the optical sensor structure during fabrication. By using this layer as both the photosensitive element and the subsequent electrode material, the patent eliminates the need for additional electrode deposition steps that could expose and damage the delicate optical sensor components. The intermediary layer absorbs the mechanical and chemical stresses of the fabrication process.
Solution Approach 2:
The patent provides beforehand cushioning by designing the transparent semiconductor layer to serve multiple protective functions. Before the optical sensor device is fully formed, this layer is positioned to shield sensitive components during subsequent processing steps. The layer's dual functionality ensures that no additional harsh processing is needed, thereby cushioning the device from potential damage.
4Adaptability or versatility
If additional process steps are added to accommodate both device types, then device compatibility is achieved, but fabrication complexity increases
Solution Approach 1:
The patent achieves device compatibility through the universality of the transparent semiconductor layer. This single layer type is used across both optical sensor and thin film transistor fabrication, eliminating the need for device-specific material layers. The layer's ability to serve multiple functions ensures compatibility between different device types without adding fabrication complexity.
Solution Approach 2:
The patent uses parameter changes through gas modification to achieve adaptability. By controlling the modification conditions, the same transparent semiconductor layer can be transformed into a conductive electrode for transistors or remain as a photosensitive layer for optical sensors. This parameter-based control provides versatility without requiring additional process steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the fabrication process, reduces damage to optical sensor devices, and increases the reliability and yield of both devices, enabling effective integration in display panels.
Implementation Method 1
A modification process is performed on the second transparent semiconductor pattern, and the modification process includes introducing at least one gas to transfer the second transparent semiconductor pattern into a transparent top electrode with electrical conductibility
Data Source
AI summary
An integration method of fabricating optical sensor device and thin film transistor device includes the follow steps. A substrate is provided, and a gate electrode and a bottom electrode are formed on the substrate. A first insulating layer is formed on the gate electrode and the bottom electrode, and the first insulating layer at least partially exposes the bottom electrode. An optical sensing pattern is formed on the bottom electrode. A patterned transparent semiconductor layer is formed on the first insulating layer, wherein the patterned transparent semiconductor layer includes a first transparent semiconductor pattern covering the gate electrode, and a second transparent semiconductor pattern covering the optical sensing pattern. A source electrode and a drain electrode are formed on the first transparent semiconductor pattern. A modification process including introducing at least one gas is performed on the second transparent semiconductor pattern to transfer the second transparent semiconductor pattern into a conductive transparent top electrode.