Trapezoidal Laser Array with Intermixed Semiconductor Bandgap
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Solution Overview
Problem
Existing trapezoidal semiconductor lasers lack flexibility in adjusting their optical properties, which limits their performance in terms of beam quality and output power.
Innovation Solution
An integrated trapezoidal laser arrangement with an injector area and an amplifying area that widens in cross-section, featuring intermixed semiconductor materials with increased electronic bandgap, allowing for flexible production of optically active and passive areas, and utilizing diffusion-induced mixing processes for bandgap modification.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If traditional trapezoidal laser structure is used, then high output power can be achieved, but flexibility in adjusting optical properties is limited
Solution Approach 1:
The patent applies local quality by creating mixed regions with different semiconductor materials (e.g., AlGaAs and GaAs) in specific areas of the laser structure. These mixed regions have different bandgaps than the surrounding material, allowing local modification of optical properties such as absorption and emission characteristics. This enables flexible adjustment of optical properties in different parts of the laser while maintaining the overall trapezoidal structure for high output power.
Solution Approach 2:
The patent utilizes parameter changes by modifying the bandgap energy through controlled mixing of semiconductor materials. By adjusting the composition ratio of different semiconductor materials in the mixed regions, the bandgap parameter can be precisely tuned to achieve desired optical properties. This allows flexible adjustment of laser characteristics such as wavelength, absorption coefficient, and gain profile without changing the fundamental device structure.
2Manufacturing precision
If semiconductor materials are intermixed to increase bandgap, then reabsorption is reduced and beam quality improves, but manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by pre-defining the mixed regions with specific material compositions during the fabrication process. The mixed regions are created with predetermined bandgap values that are optimized for reducing reabsorption and improving beam quality. This preliminary structuring of material composition simplifies subsequent processing steps and ensures consistent optical performance without requiring complex real-time adjustments during manufacturing.
Solution Approach 2:
The patent utilizes composite materials by combining different semiconductor materials (such as AlGaAs and GaAs) in controlled mixed regions. These composite material regions have tailored optical properties that differ from the constituent materials alone. The composite structure allows simultaneous achievement of reduced reabsorption, improved beam quality, and manageable manufacturing complexity by integrating multiple material functions into a unified structure.
3Productivity
If mixed regions with increased bandgap are created, then charge carrier efficiency increases, but production process complexity increases
Solution Approach 1:
The patent applies local quality by creating mixed regions with enhanced charge carrier properties in specific locations where they are most needed. These mixed regions have increased bandgap and improved charge carrier efficiency, while the rest of the structure maintains simpler material composition. This localized approach maximizes charge carrier efficiency in critical areas without requiring the entire device to undergo complex manufacturing processes.
Solution Approach 2:
The patent utilizes segmentation by dividing the laser structure into distinct regions: mixed regions with enhanced charge carrier efficiency and non-mixed regions with simpler properties. This segmentation allows independent optimization of different functional areas. The mixed regions are carefully positioned to maximize charge carrier generation and transport efficiency, while the segmented structure simplifies the overall production process by allowing different fabrication techniques for different regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances beam quality and output power by reducing reabsorption, increasing charge carrier efficiency, and simplifying the production process, while maintaining a planar structure for easier processing.
Implementation Method 1
The electronic bandgap is increased in the at least one mixed region
Implementation Method 2
utilizing diffusion-induced mixing processes for bandgap modification
Data Source
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AI summary
An integrated trapezoidal laser array comprises an injector region (2) and an optically coupled region (3) that widens in cross-section. At least one of these regions (2, 3) has a quantum trough structure with a plurality of semiconductor materials, wherein the semiconductor materials are mixed in at least one region (21, 31). The mixed region (21, 31) has a larger electrical band gap than a non-mixed region.