Trapezoidal Patch in Semiconductor Insulation
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Solution Overview
Problem
Existing semiconductor devices with inorganic insulation layers face issues of poor wire connection and increased electrical resistance due to depressions in electrode pads formed over deep through-holes, and the reliability of metal or insulation layers is compromised by the shape of dummy patterns used for step coverage.
Innovation Solution
A semiconductor device with a trapezoidal patch portion in the organic insulation layer that raises the bottom of through-holes, allowing for shallower depression in the second metal layer and improved coverage by metal or insulation layers, reducing defects and enhancing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a through-hole is formed in the organic insulation layer, then electrical connection between wiring layers is achieved, but a depression is formed in the electrode pad causing poor wire connection
Solution Approach 1:
A patch portion is formed at the bottom of the through-hole before the electrode pad is deposited. This preliminary structure raises the bottom surface, preventing the formation of a deep depression when the electrode pad is formed, thereby ensuring good wire bonding connection without compromising the electrical connection function of the through-hole
2Manufacturing precision
If a dummy pattern with quadrangular cross-section is used to flatten the insulation film, then step coverage is improved, but metal or insulation layers cannot be appropriately formed at corners causing reliability decrease
Solution Approach 1:
The patch portion is designed with a trapezoidal cross-sectional shape instead of a quadrangular shape. The trapezoidal shape has sloped sides that gradually increase in width from bottom to top, eliminating sharp corners where material deposition is problematic. This asymmetric geometry provides good step coverage while ensuring reliable formation of metal and insulation layers without corner defects
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, a first metal layer, an insulation layer, an organic layer, and a second metal layer. The first metal layer, the insulation layer, the organic layer, and the second metal layer are sequentially stacked on a surface of the semiconductor substrate. The first metal layer and the second metal layer are electrically connected to each other through vias formed in the insulation layer and the organic layer. The second metal layer includes an electrode pad at a position corresponding to the positions of the vias. At the interface between the surface of the semiconductor substrate and the first metal layer, a patch portion having a trapezoidal cross-sectional shape is disposed directly below the vias.