Trench Capacitor Edge Pattern for Thermal Stress Yield Improvement

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Integrated passive devices (IPDs) face challenges due to thermal expansion mismatches between substrate and capacitor materials, leading to stress-induced bending and trench burnout, which degrade manufacturing yields.

Innovation Solution

A trench capacitor design with edge in-trench capacitor segments having greater widths and pitches than center segments, enhancing stress absorption and substrate rigidity, thereby reducing bending and trench burnout.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If uniform trench capacitor segments are used across the substrate, then manufacturing is simplified, but thermal expansion stress causes substrate bending and trench burnout at edges

Engineering Contradiction:
Improvetrench capacitor fabrication simplicityVSAvoidsubstrate structural integrity
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent applies local quality by varying the dimensions of trench capacitor segments based on their position on the substrate. Edge segments are designed with greater widths and pitches compared to center segments, creating non-uniform local properties that adapt to different stress conditions at various locations on the substrate.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent introduces asymmetry by making the trench capacitor segments non-uniform in size and spacing. Specifically, edge segments have different dimensions (greater width and pitch) compared to center segments, breaking the symmetry to better distribute thermal expansion stresses across the substrate.

Inventive Principle:
Principle #4Asymmetry

2Reliability

If edge trench capacitor segments have greater widths and pitches, then thermal stress absorption is enhanced, but device complexity increases

Engineering Contradiction:
Improvethermal stress managementVSAvoidtrench capacitor structure variation
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements local quality by assigning different dimensional characteristics to trench capacitor segments based on their location. Edge segments have greater widths and pitches to absorb thermal stress, while center segments maintain standard dimensions, creating a tailored stress distribution pattern throughout the device.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent applies segmentation by dividing the trench capacitor into multiple discrete segments with varying dimensions. This segmentation allows each portion to be optimized for its specific location on the substrate, with edge segments designed for stress absorption and center segments for compact integration.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design improves bulk manufacturing yields by effectively managing thermal stress and reducing substrate bending and trench burnout at the edges of the trench capacitor.

Implementation Method 1

thermal expansion mismatches between substrate and capacitor materials, leading to stress-induced bending and trench burnout

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS11855133B2Trench pattern for trench capacitor yield improvement
Publication Date: 2023.12.26 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11855133B2 patent drawing
  • US11855133B2 patent drawing
  • US11855133B2 patent drawing

AI summary

Various embodiments of the present disclosure are directed towards a trench capacitor with a trench pattern for yield improvement. The trench capacitor is on a substrate and comprises a plurality of capacitor segments. The capacitor segments extend into the substrate according to the trench pattern and are spaced with a pitch on an axis. The plurality of capacitor segments comprises an edge capacitor segment at an edge of the trench capacitor and a center capacitor segment at a center of the trench capacitor. The edge capacitor segment has a greater width than the center capacitor segment and/or the pitch is greater at the edge capacitor segment than at the center capacitor segment. The greater width may facilitate stress absorption and the greater pitch may increase substrate rigidity at the edge of the trench capacitor where thermal expansion stress is greatest, thereby reducing substrate bending and trench burnout for yield improvements.