3D Trench Capacitor Hybrid Filling for Thinner Dielectrics

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Solution Overview

Problem

Conventional 3D trench capacitor structures face challenges in increasing capacitance density while maintaining operating and breakdown voltages, due to mechanical and electrical stress issues caused by thick dielectric layers, which can lead to wafer deformation and premature wearout.

Innovation Solution

A 3D trench capacitor structure incorporating a hybrid filling layer composed of a conductive layer and a polymer layer, such as Parylene AF-4, which reduces mechanical stress and allows for a thinner dielectric layer, enabling increased capacitance density and operating/breakdown voltage without wafer deformation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the thickness of the dielectric layer is increased to sustain the operating electrical field in high voltage applications, then the breakdown voltage is improved, but mechanical stress in the structure increases leading to cracks, delamination, and wafer deformation

Engineering Contradiction:
Improvebreakdown voltageVSAvoidmechanical stress
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The dielectric layer is segmented into multiple thinner dielectric layers separated by intermediate conductive layers. This segmentation allows each individual dielectric layer to be thinner and less stressful mechanically, while the cumulative thickness across multiple layers provides the necessary breakdown voltage. The intermediate conductive layers act as stress relief interfaces between the dielectric layers.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The capacitor structure uses a composite architecture combining multiple dielectric materials and conductive materials in alternating layers. This composite structure distributes mechanical stress across different material interfaces and allows optimization of each layer's thickness and material properties to balance electrical performance and mechanical integrity.

Inventive Principle:
Principle #40Composite materials

2Duration of action of stationary object

If the thickness of the dielectric layer is increased to prevent premature wear out, then the operating lifetime is improved, but electrical stress within the 3D structure increases causing faster dielectric wear out and breakdown

Engineering Contradiction:
Improveoperating lifetimeVSAvoidelectrical stress
Core Design Contradiction:
Duration of action of stationary objectVSStress or pressure

Solution Approach 1:

The dielectric layer is divided into multiple thinner layers with conductive intermediate layers. This segmentation reduces the electrical stress concentration that would occur in a single thick dielectric layer, particularly at singular points like sharp corners. Each thinner dielectric layer experiences lower electrical stress, preventing premature wear out and extending operating lifetime.

Inventive Principle:
Principle #1Segmentation

3Strength

If a thicker top electrode layer is used to fill the trench structure, then mechanical stress is increased, but if a thinner top electrode layer is used, electrical series resistance increases and voids remain in the structure

Engineering Contradiction:
Improvemechanical stressVSAvoidelectrical series resistance
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The top electrode is segmented into multiple thinner conductive layers separated by dielectric layers. This segmentation allows the total conductive material to be distributed in a way that reduces mechanical stress (thinner individual layers) while maintaining low electrical series resistance (multiple parallel conductive paths). The intermediate dielectric layers prevent void formation by providing a conformal filling structure.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS11955568B2Trench capacitor structure with hybrid filling layer
Publication Date: 2024.04.09 MURATA MFG CO LTD
  • US11955568B2 patent drawing
  • US11955568B2 patent drawing
  • US11955568B2 patent drawing

AI summary

A capacitor structure that includes a silicon substrate having a trench structure formed therein; a dielectric disposed over a surface of the trench structure, conformal to the surface of the trench structure; and a filling layer disposed over the dielectric layer and into the trench structure, the filling layer including a conductive layer and a polymer layer.