Trench Electrode Interface Structure for Lateral Stress Tolerance
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Solution Overview
Problem
Semiconductor devices with flattened wiring or electrodes on a semiconductor substrate are weak against lateral stress due to the flattened interface of each layer, which affects assembly and stress tolerance.
Innovation Solution
A semiconductor device design featuring trenches, trench electrodes, and an insulation film with recessed portions on the semiconductor substrate, where the insulation film covers some trench electrodes and has openings between them, with an electrode filling these openings to enhance stress tolerance and assembly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If wiring or electrodes are flattened on the semiconductor substrate, then assembly is improved, but stress tolerance deteriorates
Solution Approach 1:
The invention replaces the conventional flat interface between layers with a curved, undulated interface created by recessed portions in the insulation film and corresponding protrusions in the electrode. This curved geometry increases the contact area between layers, improving both assembly quality and stress tolerance by distributing mechanical stress across a larger surface area rather than concentrating it at a single flat interface.
Solution Approach 2:
The invention transitions from a two-dimensional flat contact interface to a three-dimensional undulated interface by introducing recessed portions that extend vertically into the insulation film. This dimensional change creates an interlocking structure where the electrode protrusions fit into the insulation film recesses, enhancing mechanical bonding and stress resistance while maintaining assembly feasibility.
2Ease of manufacture
If a flattened interface structure is used, then manufacturing simplicity is maintained, but structural strength against lateral stress decreases
Solution Approach 1:
The undulated interface structure with curved recessed portions is integrated into the existing manufacturing process flow. The recessed portions are formed in the insulation film using standard photolithography and etching techniques, followed by electrode formation that naturally conforms to the curved surface. This approach enhances lateral stress resistance without requiring fundamentally new manufacturing equipment or processes.
Solution Approach 2:
The invention introduces localized recessed portions only in specific regions where stress concentration is expected, rather than flattening the entire interface. This localized modification allows the structure to maintain simplicity in non-critical areas while enhancing strength in stress-prone regions, optimizing the balance between manufacturing ease and structural performance.
Data Source
AI summary
A semiconductor device is provided that maintains assembly and improves stress tolerance. The semiconductor device includes a plurality of trenches, a plurality of trench electrodes, an insulation film, and a first electrode. The trench electrodes are provided respectively inside the trenches. The insulation film covers two or more of the trench electrodes. The first electrode is provided on the insulation film. The insulation film has an opening provided between the two or more trench electrodes covered with the insulation film. The first electrode is provided on the semiconductor substrate to fill the opening. Each of the trench electrodes has an upper surface that includes a first recessed portion. The insulation film has an upper surface that includes a second recessed portion located immediately above the first recessed portion. The first electrode has an upper surface that includes a third recessed portion located immediately above the opening.