Trench Gate Semiconductor Layout for Lower Turn-Off Loss
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Solution Overview
Problem
In semiconductor devices with a macro thinning structure, the loss reduction is insufficient due to the lack of consideration for multigate driving.
Innovation Solution
The semiconductor device incorporates a design with a first region having a first trench and two or more second trenches that sandwich the first trench, where the gate electrodes in the second trenches are connected to each other but not to the gate electrode in the first trench. Additionally, the base layer is connected to the emitter electrode in the region between the first and second regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a macro thinning structure with multiple trenches is adopted, then the device structure is improved for better performance, but the loss reduction is insufficient because multigate driving is not considered
Solution Approach 1:
The gate electrodes are segmented into multiple independent groups, each controllable through separate control terminals. This allows different regions of the semiconductor device to be controlled independently, enabling selective discharge of holes from specific trench regions during turn-off operation, thereby reducing turn-off loss while maintaining manageable complexity through modular control architecture
Solution Approach 2:
The gate electrode connections are made dynamic through the use of multiple control terminals that can independently adjust the potential of different gate electrode groups. This dynamic control capability allows the system to adaptively manage hole discharge timing and magnitude, optimizing turn-off loss reduction while providing flexible control without excessive complexity
2Loss of energy
If gate electrodes in all trenches are connected together, then the control is simplified, but holes cannot be discharged effectively from specific regions leading to higher turn-off loss
Solution Approach 1:
The gate electrodes are divided into multiple independently controllable groups with separate control terminals, allowing selective discharge of holes from specific trench regions (such as the second region) while maintaining simplified control through independent terminal management rather than complex interconnections
Solution Approach 2:
Different regions of the semiconductor device are assigned different control characteristics through the multigate structure. Specifically, the second region with its dedicated control terminal can be optimized for rapid hole discharge during turn-off, while other regions maintain their control characteristics, allowing localized optimization of turn-off loss without compromising overall device control simplicity
Data Source
AI summary
A trench in a first region includes a first trench, and two or more second trenches that sandwich the first trench from both sides. The gate electrodes formed in the two or more second trenches are connected to each other and are not connected to the gate electrode formed in the first trench. The gate electrode formed in the trench in the second region is connected to the emitter electrode. The base layer is connected to the emitter electrode in a region between the first region and the second region.