Trench-Based Guard Bands for Semiconductor Device Reliability
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Solution Overview
Problem
The integration of two-dimensional semiconductor devices is limited by the need for expensive processing equipment to achieve fine patterns, and three-dimensional semiconductor memory devices face challenges in reliability and efficiency.
Innovation Solution
A semiconductor device design incorporating a device isolation layer, guard band, dummy transistors, and pass transistors with field doping regions, along with a semiconductor system that includes input/output pads and controllers, enhances reliability and connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If two-dimensional semiconductor devices are highly integrated to increase data storage capacity, then the integration level improves, but the manufacturing cost increases due to expensive processing equipment needed for fine patterns
Solution Approach 1:
The patent transitions from two-dimensional planar semiconductor devices to three-dimensional vertically arranged memory cells. By stacking memory cells vertically in multiple layers along the third direction, the device achieves higher integration capacity without requiring finer lateral patterning, thus avoiding the need for expensive processing equipment while increasing data storage capacity.
2Quantity of substance
If three-dimensional semiconductor memory devices are designed to increase integration, then the data storage capacity improves, but the reliability deteriorates due to challenges in maintaining performance at higher integration levels
Solution Approach 1:
The patent divides the three-dimensional memory structure into multiple discrete memory cell layers stacked vertically. Each memory cell layer is further segmented into memory cells with distinct word lines and bit lines. This segmentation allows for modular design and testing, improving reliability by isolating potential failure points while maintaining high integration capacity through vertical stacking.
Solution Approach 2:
The patent introduces select gates (first select gates and second select gates) as intermediary elements between the word lines/bit lines and the memory cells. These select gates act as mediators that control and isolate specific memory cell regions, enabling precise addressing and reducing interference between adjacent memory cells, thereby improving overall device reliability while maintaining high integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves the reliability and connectivity of semiconductor devices, allowing for higher integration and reduced manufacturing costs while maintaining performance.
Implementation Method 1
A field doping region is provided, which includes impurities in the substrate
Data Source
AI summary
A semiconductor device includes a substrate having at least one device isolation layer embedded therein, which defines a dummy active pattern and a plurality of active patterns in the substrate. A guard band extends in the substrate and surrounds the dummy active pattern and the plurality of active patterns. A dummy transistor has a plurality of dummy source/drain regions in the dummy active pattern, and a plurality of pass transistors have source/drain regions in the plurality of active patterns. Dummy wiring lines are provided, which electrically connect the guard band to the dummy source/drain regions of the dummy transistor. A field doping region, which at least partially overlaps with the device isolation layer, has an impurity therein that extends into the substrate.