Trench-Isolated Semiconductor Layout for Higher Breakdown Voltage
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Solution Overview
Problem
Current semiconductor devices face challenges in optimizing electrical characteristics, particularly in breakdown voltage and reducing electrical influence from outer regions, due to the integration of trench gate structures and separation structures, which can restrict device performance.
Innovation Solution
The semiconductor device incorporates a trench separation structure that demarcates inner and outer regions, with a trench gate structure penetrating through the inner region, and includes an outer diode electrically separated from the trench gate and inner diode, allowing for improved electrical characteristics by preventing electrical influence from outer regions and enhancing breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a trench gate structure is integrated with a separation structure, then device integration is improved, but electrical characteristics such as breakdown voltage deteriorate due to electrical influence from outer regions
Solution Approach 1:
The device is divided into an inner region containing the trench gate structure and an outer region separated by a trench separation structure. This segmentation isolates the high-voltage switching operations to the inner region, preventing electrical influence from the outer region and thereby improving breakdown voltage while maintaining integration benefits.
Solution Approach 2:
The trench separation structure extracts and removes the electrical influence from the outer region by creating a physical and electrical barrier. This allows the inner region to operate independently at high voltages without interference, resolving the contradiction between integration and electrical performance.
2Productivity
If inner and outer regions are electrically connected, then device performance is improved, but unwanted electrical influence from outer regions increases
Solution Approach 1:
The trench separation structure acts as an intermediary barrier between the inner and outer regions. It provides controlled electrical isolation that prevents harmful electrical influence from propagating while still allowing the device to function as an integrated system, thus maintaining productivity without introducing harmful electrical effects.
Data Source
AI summary
The semiconductor device includes a chip which has a main surface, a first region of a first conductivity type which is formed in a surface layer portion of the main surface, a second region of a second conductivity type which is formed in a surface layer portion of the first region, a trench separation structure which penetrates through the second region, surrounds an interior of the second region, and demarcates an inner region at an inner side of the second region and an outer region at an outer side of the second region in the main surface, a trench gate structure which is formed in the inner region, an inner diode which includes the first region and the second region that are positioned in the inner region, and an outer diode which includes the first region and the second region that are positioned in the outer region.