Trench Isolation Connectors for Compact Stacked High-Voltage ICs
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Solution Overview
Problem
Existing interconnection techniques for integrated circuits (ICs) are inadequate as IC technologies scale, leading to increased complexity and inefficiency in connecting high voltage devices, occupying excessive space and lacking flexibility in routing.
Innovation Solution
Trench isolation connectors are introduced to electrically connect stacked semiconductor structures, providing compact and flexible interconnections by extending through the device substrate, reducing device area and improving routing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If existing interconnection techniques are used to connect high voltage devices, then the devices can be interconnected, but the occupied area increases and area efficiency decreases
Solution Approach 1:
The patent transitions from planar interconnection to three-dimensional stacked interconnection by forming trench isolation connectors that extend vertically through multiple device layers. This dimensional change allows high voltage devices to be interconnected in the vertical dimension rather than requiring lateral space, achieving up to 66% area reduction while maintaining interconnection capability
Solution Approach 2:
The interconnection structure is segmented into discrete trench isolation connectors that can be independently formed and configured. Each trench connector serves as a separate interconnection element extending through specific device layers, allowing flexible routing and reducing the need for large continuous interconnection areas
2Area of stationary object
If trench isolation connectors are used to interconnect stacked high voltage devices, then area efficiency improves and routing flexibility increases, but the device structure becomes more complex
Solution Approach 1:
The trench isolation structure serves multiple functions simultaneously: it provides electrical isolation between devices, creates vertical pathways for interconnection, and enables three-dimensional device stacking. This multi-functionality reduces the need for separate dedicated interconnection structures, thereby managing complexity while achieving area reduction
Solution Approach 2:
The patent merges the isolation function and interconnection function into a single integrated trench isolation connector structure. The conductive material filling the trench isolation structure serves both as part of the isolation architecture and as the interconnection pathway, eliminating the need for separate isolation and interconnection elements
Data Source
AI summary
Trench isolation connectors are disclosed herein for stacked semiconductor structures, and particularly, for stacked semiconductor structures having high voltage devices. An exemplary stacked device arrangement includes a first device substrate having a first device and a second device substrate having a second device. An isolation structure disposed in the second device substrate surrounds the second device. The isolation structure extends through the second device substrate from a first surface of the second device substrate to a second surface of the second device substrate. A conductive connector is disposed in the isolation structure. The conductive connector is connected to the second device and the first device. The conductive connector extends from the first surface of the second device substrate to the second surface of the second device substrate. The first device and the second device may be a first high voltage device and a second high voltage device, respectively.