Trench Monocrystalline Semiconductor Structure for GaN Crack Relief

The patent divides the substrate into multiple independent islands rather than using a continuous large-size substrate. Each island is small enough to avoid cracking while maintaining good thermal and electrical conductivity. This segmentation resolves the contradiction by allowing the use of silicon substrates for their excellent conductivity properties while avoiding the cracking issue that occurs in large-size continuous substrates.

The patent creates local regions (islands) with specific properties optimized for their function. Each island has controlled size and shape to maintain thermal and electrical conductivity while avoiding the mismatch-induced cracking problem. The local quality principle allows different regions to have different characteristics, with each island being small enough to prevent cracking while collectively providing the required conductivity.

Instead of using one large continuous substrate, the patent segments it into multiple smaller islands. Each island is small enough to avoid cracking while the collective area of all islands provides the necessary manufacturing scale. This resolves the contradiction between substrate size and cracking resistance by distributing the total area across multiple crack-free segments.

The patent transitions from a two-dimensional continuous substrate to a three-dimensional arrangement of discrete islands with varying sizes and shapes. This dimensional change allows the system to maintain large total area while each individual component remains small enough to avoid cracking, effectively resolving the size-cracking contradiction.

The patent extracts the problematic continuous substrate structure and replaces it with discrete islands on an amorphous base. The trenches are introduced to separate and isolate the islands, preventing crack propagation. This extraction of the continuous structure and replacement with discrete elements reduces cracking while the amorphous base provides a simple, low-cost foundation that doesn't add excessive complexity.

The patent uses an amorphous material base that is simpler and cheaper than crystalline substrates. While amorphous materials have different properties, they provide adequate support for the semiconductor islands at lower cost and with reduced cracking risk. The trenches provide the necessary structural separation without requiring complex expensive materials, resolving the contradiction between reliability and complexity.