TRIAC-Based Memory Structure for Disturbance Suppression
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Memory array structures composed of memory cells and diodes, such as MRAMs, face disturbances during operations like writing, erasing, and reading, leading to incorrect data manipulation in non-selected memory cells.
Innovation Solution
A memory structure utilizing a triode for alternating current (TRIAC) with a semiconductor layer and gate electrode, where the memory cell is electrically connected to the TRIAC, allowing for bidirectional or unidirectional operations, and specific voltage applications to perform write, erase, and read operations while minimizing disturbances to non-selected cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a diode is used as a selective device in memory array structure, then the memory cell can be protected from other memory cells, but disturbance still occurs to non-selected memory cells during write, erase, or read operations
Solution Approach 1:
The patent changes the electrical parameters of the selective device by using a TRIAC instead of a diode. The TRIAC can dynamically adjust its resistance state between high-resistance (blocking) and low-resistance (conducting) states through gate control, enabling precise control of current flow to selected memory cells while maintaining high blocking capability for non-selected cells, thus eliminating disturbance issues.
Solution Approach 2:
The TRIAC introduces dynamic control capability to the selective device. Unlike a passive diode, the TRIAC can be actively controlled through its gate terminal to switch between conducting and blocking states, allowing the memory structure to dynamically isolate non-selected cells during operations and only activate the selected cell when needed.
2Reliability
If a TRIAC is used in memory structure, then leakage currents are suppressed and electrical characteristics are enhanced, but device complexity increases
Solution Approach 1:
The TRIAC serves multiple functions within the memory structure: it acts as a selective device for current direction control, a switch for isolating non-selected cells, and a protection element against leakage currents. This multi-functionality reduces the need for additional separate components, thereby managing device complexity while achieving superior electrical characteristics.
3Adaptability or versatility
If bidirectional operation memory cell is used, then operation flexibility is improved, but sensitivity to disturbance increases
Solution Approach 1:
The TRIAC acts as an intermediary between the bidirectional operation memory cell and the external circuitry. It controls and filters the current flow in both directions, allowing the memory cell to operate bidirectionally while the TRIAC blocks or suppresses any harmful disturbance or leakage currents that could affect the cell's sensitive state.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The TRIAC-based memory structure effectively suppresses leakage currents and avoids disturbances to non-selected memory cells, enhancing electrical characteristics and integration density, and allowing precise operations on selected memory cells.
Implementation Method 1
The semiconductor layer is disposed on the first terminal and includes a first doped layer, a second doped layer, a third doped layer, a first doped region, a second doped region and a third doped region. The first doped layer and the third doped layer are a first conductive type, the second doped layer, the first doped region, the second doped region and the third doped region are a second conductive type
Data Source
AI summary
This invention provides a memory structure and an operation method thereof. The memory structure includes a triode for alternating current (TRIAC) and a memory cell. The memory cell is electrically connected to the TRIAC.