Semiconductor Package TSV Binary-Tree Testing for Local Malfunction Detection

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Solution Overview

Problem

Existing semiconductor package testing methods for through via structures, such as daisy chain schemes, are inadequate in identifying local malfunctions and often require additional circuit components, leading to inefficiencies in diagnosing malfunctions in through-silicon/substrate-via structures.

Innovation Solution

The semiconductor package incorporates a binary-tree structure for TSVs, where each TSV is coupled through branch structures, allowing for efficient local testing of TSV structures by propagating input and output test signals through these branches to identify malfunctions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If daisy chain testing scheme is used for TSV structures, then testing can be performed, but local malfunctions cannot be identified and additional circuit components are required

Engineering Contradiction:
Improvemalfunction identification capabilityVSAvoidcircuit components
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent divides the TSV testing into segmented groups where TSVs are organized in a tree structure with intermediate nodes. Each node can be tested independently by controlling switches to connect specific TSVs to test signal lines, enabling localized malfunction identification without requiring additional circuit components throughout the entire structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces a hierarchical dimension to the testing scheme by organizing TSVs into multiple levels of a tree structure. Instead of a flat daisy chain arrangement, TSVs are grouped into nodes at different hierarchical levels, allowing testing to proceed from leaf nodes up to the root node, thereby enabling local malfunction identification through dimensional reorganization.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If traditional testing methods are used, then all TSVs can be tested, but testing efficiency is low and local malfunctions remain undetected

Engineering Contradiction:
Improvetesting efficiencyVSAvoidlocal malfunction detection
Core Design Contradiction:
ProductivityVSMeasurement precision

Solution Approach 1:

By segmenting TSVs into groups managed by intermediate nodes, the testing process can focus on specific segments independently. Switches control which TSVs are connected to test signal lines at each node, allowing efficient testing of local groups and rapid identification of malfunctioning segments without testing the entire TSV array sequentially.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Intermediate nodes act as mediators between individual TSVs and test signal lines. These nodes contain switches that control the connection between TSVs and testing circuitry, enabling efficient grouping and selective testing of TSV segments. The intermediate nodes facilitate localized testing by mediating the connection between multiple TSVs and the test equipment.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS12422470B2Semiconductor packages with through via structures and methods for testing the same
Publication Date: 2025.09.23 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12422470B2 patent drawing
  • US12422470B2 patent drawing
  • US12422470B2 patent drawing

AI summary

A semiconductor package includes an array of through-substrate-via (TSV) structures comprising a number (O) of TSV structures, wherein the array comprises a number (M) of active TSV structures; a number (N) of contact structures, the contact structures comprising a plurality of pairs configured to receive an input test signal and provide an output test signal, respectively; and a plurality of binary-tree branches, each of the plurality of binary-tree branches electrically coupling a first one of the active TSV structures to a second one of the active TSV structures and a third one of the active TSV structures.