TSV Bonding Conductor Layout for High-Density 3D IC Stacking
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Solution Overview
Problem
The semiconductor industry faces physical limitations in two-dimensional integrated circuit formation due to increasing interconnection lengths and densities, necessitating new mechanisms for forming semiconductor structures.
Innovation Solution
A method involving the formation of through semiconductor vias (TSVs) and bonding conductors in semiconductor dies, which are stacked and bonded using various bonding techniques, including metal-to-metal and dielectric-to-dielectric bonding, to create a three-dimensional integrated circuit (3DIC) structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If two-dimensional integrated circuit formation continues with successive reductions in minimum feature size, then integration density improves, but interconnection length and complexity increase significantly
Solution Approach 1:
The patent transitions from two-dimensional planar integration to three-dimensional vertical integration by stacking multiple semiconductor dies. This dimensional change allows integration density to increase volumetrically rather than areally, reducing the horizontal interconnection length while maintaining high integration density through vertical stacking of device layers and interconnect tiers.
2Quantity of substance
If the number of semiconductor devices increases in two-dimensional layout, then integration density improves, but the number and length of interconnections between devices increases
Solution Approach 1:
By stacking semiconductor dies vertically, the patent reduces the horizontal distance between devices that would otherwise require long interconnections in a planar layout. The vertical stacking creates shorter, more direct interconnect paths between corresponding devices on adjacent dies, thereby reducing interconnection complexity while enabling higher device counts through increased volumetric integration.
Solution Approach 2:
The patent divides the integrated circuit into multiple discrete semiconductor dies, each containing a subset of the total devices. These segmented dies are then stacked and interconnected through vertical vias and bonding interfaces. This segmentation allows each die to have fewer, shorter interconnections locally, while the overall system achieves high integration density through the stacked architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances integration density and facilitates faster inter-device communication, improving data bandwidth and data storage capabilities in semiconductor devices.
Implementation Method 1
bonding a die stack to a carrier die, wherein forming the die stack involves stacking the semiconductor dies
Implementation Method 2
bonding conductors distributed at a front side of the semiconductor die are in physical and electrical contact with the through semiconductor via
Data Source
AI summary
A semiconductor structure includes a first semiconductor substrate, a first interconnect structure disposed below the first semiconductor substrate, a through substrate via (TSV) penetrating through the first semiconductor substrate and extending into the first interconnect structure, and a first bonding conductor disposed below the first interconnect structure and electrically coupled to the TSV through the first interconnect structure. The TSV includes a first surface in the first interconnect structure and a second surface opposite to the first surface, and the first bonding conductor includes a first bonding surface facing away the first interconnect structure. In a view, a boundary of the first bonding surface of the first bonding conductor overlaps a boundary of the first surface of the TSV.