TSV Chip Bonding With Microwave-Heated Flux to Minimize Warpage

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Solution Overview

Problem

Conventional Laser-Assisted Bonding (LAB) processes in Through-Silicon Via (TSV) technology result in non-uniform thermal energy transfer, leading to warpage issues that adversely affect device performance and subsequent fabrication processes.

Innovation Solution

A method involving the use of microwave radiation to heat first connecting bumps and a flux coated on the bumps, forming connections between chips with TSVs, utilizing a polar flux that efficiently absorbs microwave energy to achieve uniform heat distribution and minimize warpage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional Laser-Assisted Bonding (LAB) process is used, then chip connections are formed, but non-uniform thermal energy transfer causes warpage issues

Engineering Contradiction:
Improvechip connection stabilityVSAvoidchip warpage
Core Design Contradiction:
ReliabilityVSShape

Solution Approach 1:

The patent replaces the conventional laser heating system with a microwave-based heating system. The microwave generator emits microwave energy that penetrates the chips and heats the connecting bumps uniformly throughout their volume, eliminating the non-uniform thermal energy transfer caused by laser surface heating. This substitution of heating mechanism resolves the warpage issue while maintaining reliable chip connections.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the fundamental heating parameter from optical energy (laser) to electromagnetic energy (microwave). This parameter change enables volumetric heating of the connecting bumps rather than surface heating, achieving uniform temperature distribution and preventing thermal stress-induced warpage while forming stable chip connections.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If microwave radiation is used to heat connecting bumps, then uniform heat distribution is achieved, but new heating method complexity is introduced

Engineering Contradiction:
Improveheat distribution uniformityVSAvoidheating system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent replaces the complex laser heating system with a microwave-based system that achieves superior uniformity. The microwave generator with waveguide structure provides volumetric heating capability that is inherently more uniform than surface laser heating, and the system integrates standard microwave components that are well-established in semiconductor manufacturing.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method reduces warpage issues by selectively heating the connecting bumps, ensuring uniform heat distribution and stable chip connections, while maintaining the integrity of the electronic device.

Implementation Method 1

utilizing a polar flux that efficiently absorbs microwave energy to achieve uniform heat distribution

Methodology Applied
Scientific EffectMicrowave radiation absorption: Absorption (EM radiation)

Implementation Method 2

heating the first connecting bumps and the first flux by irradiating the first connecting bumps and the first flux with microwave

Methodology Applied
Scientific EffectDielectric heating: Dielectric Heating

Implementation Method 3

heating the first connecting bumps and the first flux by irradiating the first connecting bumps and the first flux with microwave, to form connections between the first chip and the second chip

Methodology Applied
Scientific EffectSoldering: Soldering

Data Source

PatentUS20250323208A1Method for forming an electronic device
Publication Date: 2025.10.16 JCET STATS CHIPPAC KOREA LTD
  • US20250323208A1 patent drawing
  • US20250323208A1 patent drawing
  • US20250323208A1 patent drawing

AI summary

An electronic device and a method for forming the same is provided. The method comprises: providing a first chip comprising first through-silicon vias (TSV) and a second chip comprising second TSVs, wherein first connecting bumps are attached on a lower surface of the first chip, and at least a portion of the first connecting bumps are connected to respective ones of the first TSVs; coating a first flux on the first connecting bumps; contacting the first connecting bumps to an upper surface of the second chip, to form connections between at least a portion of the first connecting bumps and respective ones of the second TSVs; and heating the first connecting bumps and the first flux by irradiating the first connecting bumps and the first flux with microwave, to form connections between the first chip and the second chip.