Semiconductor TSV Dummy Support Pattern for Insulation Uniformity
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Solution Overview
Problem
Current semiconductor devices with through-silicon-via (TSV) technology face challenges in achieving stable operating characteristics and high reliability, particularly in the formation of TSV structures for three-dimensional packages, where the dishing phenomenon during insulation layer formation can lead to concave recesses and affect the integrity of electrical connections.
Innovation Solution
The semiconductor device incorporates a substrate with a cell array region and a TSV region, featuring an insulation layer with recess regions, a dummy support pattern overlapping the recesses, and TSV electrodes penetrating through the dummy support pattern and substrate, along with a buried insulation pattern to uniformly form the upper insulation layer and alleviate step differences between regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If TSV structures are formed for three-dimensional packages, then electrical connection capability is improved, but dishing phenomenon occurs during insulation layer formation causing concave recesses that worsen connection integrity
Solution Approach 1:
A dummy support pattern is formed in advance on the insulation layer at the TSV region before the insulation layer is fully deposited. This preliminary structure compensates for the dishing phenomenon by providing a raised surface that fills in the concave recesses, enabling the subsequent insulation layer to be formed uniformly without the defects caused by dishing.
Solution Approach 2:
The dummy support pattern acts as an intermediary element between the substrate and the upper insulation layer. It mediates the uneven surface caused by dishing by providing a compensating raised structure, allowing the insulation layer to be deposited uniformly over both the cell array region and the TSV region without direct exposure to the underlying concave defects.
2Reliability
If insulation layer is formed over TSV region, then electrical isolation is achieved, but dishing phenomenon creates concave recesses affecting structural integrity
Solution Approach 1:
The dummy support pattern is formed preliminarily on the insulation layer before completing the insulation structure. This advance preparation creates a compensating raised surface that counteracts the concave recesses formed by dishing, ensuring the final insulation layer maintains structural integrity and flatness.
Solution Approach 2:
The dummy support pattern is selectively formed only in the TSV region where dishing occurs, rather than uniformly across the entire substrate. This localized approach addresses the specific shape defect in the TSV area while maintaining the overall insulation layer structure, achieving local quality improvement without unnecessary additional complexity elsewhere.
Data Source
AI summary
A semiconductor may include a substrate including a cell array region and a TSV region, an insulation layer disposed on the substrate and having a recess region on the TSV region, a capacitor on the insulation layer of the cell array region, a dummy support pattern disposed on the insulation layer of the TSV region and overlapping the recess region, when viewed in plan, and a TSV electrode penetrating the dummy support pattern and the substrate.