TSV Annular Guard Ring Structure Against Moisture Ingress
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Solution Overview
Problem
Existing methods have not effectively addressed the issue of moisture and chemical ingress into the front side interconnects during the formation of semiconductor devices, which reduces semiconductor devices, which reduces the semiconductor chip yield and reliability.
Innovation Solution
The implementation of an annular guard ring composed of a liner material and dielectric material around the through-silicon-via (TSV) in the semiconductor structure, which acts as a barrier to prevent moisture and chemical ingress during the TSV formation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If TSV formation process is implemented, then interconnect length is reduced and communication speed is improved, but moisture and chemical ingress occurs into front side interconnects
Solution Approach 1:
An annular guard ring structure is introduced as an intermediary barrier between the TSV formation process and the front side interconnects. This guard ring comprises a first barrier layer, first interlayer dielectric material, second barrier layer, and second interlayer dielectric material, creating a protective intermediary structure that prevents moisture and chemical ingress while allowing the TSV process to proceed
Solution Approach 2:
The guard ring utilizes thin film structures (barrier layers and interlayer dielectric materials) to create a protective shell around the TSV structure. These thin films form a flexible yet effective barrier that prevents harmful moisture and chemical penetration into the front side interconnects during TSV formation
2Reliability
If TSV formation process is implemented, then interconnect performance is improved, but semiconductor chip yield is reduced
Solution Approach 1:
The annular guard ring serves as a protective intermediary that isolates the front side interconnects from the TSV formation process. This mediator structure prevents damage to existing interconnects, thereby maintaining high semiconductor chip yield while enabling improved interconnect performance through TSV implementation
3Length of moving object
If TSV formation process is implemented, then vertical connections are achieved, but reliability of front side interconnects deteriorates
Solution Approach 1:
The guard ring employs thin film barrier layers and interlayer dielectric materials to create a flexible protective shell around the TSV structure. This shell prevents moisture and chemical penetration that would otherwise compromise the reliability of front side interconnects, allowing long vertical connections to be formed without sacrificing interconnect reliability
Data Source
AI summary
A semiconductor structure with an annular guard ring extending through an interlayer dielectric (ILD) layer to a top surface of a semiconductor substrate. The annular guard ring surrounds a through-silicon-via (TSV). The annular guard ring is composed of layer of a liner material around a dielectric material.