TSV Conductive Plug Isolation Ring for Stress and EMI Control
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Solution Overview
Problem
The integration of chips through Through-Silicon Vias (TSV) causes stress concentration and deformation in semiconductor structures due to thermal expansion mismatch between conductive plugs and the substrate and dielectric layer, affecting signal transmission and potentially damaging functional elements.
Innovation Solution
A semiconductor structure incorporating a conductive plug and an isolation ring structure that surrounds the conductive plug to isolate deformation and electromagnetic interference, reducing the impact on functional elements by extending deformation paths and providing electromagnetic shielding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If Through-Silicon Vias (TSV) are used to implement chip integration and assembly in the Z-axis direction, then interconnection between chips is achieved, but stress concentration and deformation occur due to thermal expansion mismatch between conductive plugs and the substrate and dielectric layer
Solution Approach 1:
The isolation ring structure serves as an intermediary element between the conductive plug and the surrounding dielectric layer. It acts as a stress buffer that absorbs and distributes the thermal expansion stress, preventing direct transmission of stress to the substrate and functional elements. This mediator structure resolves the contradiction by enabling TSV interconnection while maintaining structural stability through stress isolation.
Solution Approach 2:
The isolation ring structure changes the physical parameters of the interface between the conductive plug and dielectric layer. By introducing a material with intermediate thermal expansion properties or different mechanical characteristics, the stress distribution is fundamentally altered, reducing stress concentration and preventing deformation while maintaining the interconnection function.
2Productivity
If conductive plugs are arranged in the substrate and dielectric layer for interconnection, then chip integration is achieved, but the electric field of the conductive plug influences signal transmission of peripheral components
Solution Approach 1:
The isolation ring structure acts as an electromagnetic intermediary that shields peripheral components from the electric field generated by the conductive plug. It functions as an electromagnetic barrier that contains or redirects the electric field lines, preventing them from reaching and interfering with signal transmission in adjacent regions, thus resolving the interference issue while maintaining interconnection functionality.
Solution Approach 2:
The isolation ring introduces localized electromagnetic shielding properties at the interface between the conductive plug and dielectric layer. By creating a region with different electromagnetic characteristics (such as higher conductivity or permeability), it locally contains the electric field and prevents its spread to peripheral components, solving the interference problem without affecting the overall interconnection performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The isolation ring structure effectively reduces deformation forces and electromagnetic interference, ensuring functional elements operate normally and maintaining structural integrity, thereby enhancing the performance and integration capabilities of semiconductor structures.
Implementation Method 1
an isolation ring structure that surrounds the conductive plug to isolate deformation and electromagnetic interference
Implementation Method 2
fill conductive materials in the through hole so as to form an interconnecting structure. The conductive materials include different types of metal materials.
Data Source
AI summary
A semiconductor structure is provided, including: a substrate and a dielectric layer arranged on the substrate; a conductive plug, wherein a first part of the conductive plug is arranged in the substrate, and a second part of the conductive plug is arranged in the dielectric layer; and an isolation ring structure at least surrounding the second part of the conductive plug.